Design and research of high voltage β-Ga 2 O 3 /4H-SiC heterojunction LDMOS
In recent years, gallium oxide (Ga 2 O 3 ), one of the ultra-wide band-gap semiconductor materials, has been regarded as one of the most promising materials in the field of high-voltage and high-power electronic devices in the future because of its unique electrical properties and low preparation co...
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| Veröffentlicht in: | Engineering Research Express 2024-12, Vol.6 (4), p.45338 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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