Field emission of GaN nanofilms on Si substrates enhanced by hydrogen plasma treatment

The (002) oriented GaN nanostructured films prepared by pulsed laser deposition (PLD) on n-type Si (100) substrates were treated by H- and O-plasma, finding both treatments do not make the sizable changes in crystalline structure and morphology of GaN nanofilms. However, the field emission (FE) perf...

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Veröffentlicht in:	Surface topography metrology and properties 2021-03, Vol.9 (1), p.15014
Hauptverfasser:	Song, Zhi-Wei, Wang, Changhao, Guo, Gen-Cai, Yang, Meng-Qi, Liang, Qi, Wang, Bo, Chu, Wei-Guo, Wang, Ru-Zhi
Format:	Artikel
Sprache:	eng
Schlagworte:	field emission first-principles calculations GaN nanofilms plasma treatment
Online-Zugang:	Volltext
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