Relation of V/III ratio of AlN interlayer with the polarity of nitride

N-polar GaN film was obtained by using a high-temperature AlN buffer layer. It was found that the polarity could be inverted by a thin low-temperature AlN interlayer with the same V/III ratio as that of the high-temperature AlN layer. Continuing to increase the V/III ratio of the low-temperature AlN...

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Veröffentlicht in:	Chinese physics B 2024-10, Vol.33 (11), p.117801
Hauptverfasser:	Su, Zhaole, Li, Yangfeng, Hu, Xiaotao, Song, Yimeng, Deng, Zhen, Ma, Ziguang, Du, Chunhua, Wang, Wenxin, Jia, Haiqiang, Jiang, Yang, Chen, Hong
Format:	Artikel
Sprache:	eng
Schlagworte:	chemistry of MOCVD and other vapor deposition methods III-V semiconductors semiconductors
Online-Zugang:	Volltext
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