In-situ deposited anti-aging TiN capping layer for Nb superconducting quantum circuits
The performance of Nb superconducting quantum devices is predominantly limited by dielectric loss at the metal–air interface, where Nb 2 O 5 is considered the main loss source. Here, we suppress the formation of native oxides by in-situ deposition of a TiN capping layer on the Nb film. With TiN capp...
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| Veröffentlicht in: | Chinese physics B 2024-09, Vol.33 (9), p.90310 |
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| container_title | Chinese physics B |
| container_volume | 33 |
| creator | Tao, Hao-Ran Du, Lei Guo, Liang-Liang Chen, Yong Zhang, Hai-Feng Yang, Xiao-Yan Xu, Guo-Liang Zhang, Chi Jia, Zhi-Long Duan, Peng Guo, Guo-Ping |
| description | The performance of Nb superconducting quantum devices is predominantly limited by dielectric loss at the metal–air interface, where Nb
2
O
5
is considered the main loss source. Here, we suppress the formation of native oxides by
in-situ
deposition of a TiN capping layer on the Nb film. With TiN capping layers, no Nb
2
O
5
forms on the surface of the Nb film. The quality factor
Q
i
of the Nb resonator increases from 5.6 × 10
5
to 7.9 × 10
5
at low input power and from 6.8 × 10
6
to 1.1 × 10
7
at high input power. Furthermore, the TiN capping layer also shows good aging resistance in Nb resonator devices, with no significant performance fluctuations after one month of aging. These findings highlight the effectiveness of TiN capping layers in enhancing the performance and longevity of Nb superconducting quantum devices. |
| doi_str_mv | 10.1088/1674-1056/ad6a3c |
| format | Article |
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2
O
5
is considered the main loss source. Here, we suppress the formation of native oxides by
in-situ
deposition of a TiN capping layer on the Nb film. With TiN capping layers, no Nb
2
O
5
forms on the surface of the Nb film. The quality factor
Q
i
of the Nb resonator increases from 5.6 × 10
5
to 7.9 × 10
5
at low input power and from 6.8 × 10
6
to 1.1 × 10
7
at high input power. Furthermore, the TiN capping layer also shows good aging resistance in Nb resonator devices, with no significant performance fluctuations after one month of aging. These findings highlight the effectiveness of TiN capping layers in enhancing the performance and longevity of Nb superconducting quantum devices.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><identifier>DOI: 10.1088/1674-1056/ad6a3c</identifier><language>eng</language><publisher>Chinese Physical Society and IOP Publishing Ltd</publisher><subject>anti-aging ; dielectric loss ; Nb superconducting quantum circuits ; oxidation</subject><ispartof>Chinese physics B, 2024-09, Vol.33 (9), p.90310</ispartof><rights>2024 Chinese Physical Society and IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c163t-119f7809dd71f504d4a615995e07afe4110eda009051dc591d3a7d238bee01153</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1674-1056/ad6a3c/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821</link.rule.ids></links><search><creatorcontrib>Tao, Hao-Ran</creatorcontrib><creatorcontrib>Du, Lei</creatorcontrib><creatorcontrib>Guo, Liang-Liang</creatorcontrib><creatorcontrib>Chen, Yong</creatorcontrib><creatorcontrib>Zhang, Hai-Feng</creatorcontrib><creatorcontrib>Yang, Xiao-Yan</creatorcontrib><creatorcontrib>Xu, Guo-Liang</creatorcontrib><creatorcontrib>Zhang, Chi</creatorcontrib><creatorcontrib>Jia, Zhi-Long</creatorcontrib><creatorcontrib>Duan, Peng</creatorcontrib><creatorcontrib>Guo, Guo-Ping</creatorcontrib><title>In-situ deposited anti-aging TiN capping layer for Nb superconducting quantum circuits</title><title>Chinese physics B</title><addtitle>Chin. Phys. B</addtitle><description>The performance of Nb superconducting quantum devices is predominantly limited by dielectric loss at the metal–air interface, where Nb
2
O
5
is considered the main loss source. Here, we suppress the formation of native oxides by
in-situ
deposition of a TiN capping layer on the Nb film. With TiN capping layers, no Nb
2
O
5
forms on the surface of the Nb film. The quality factor
Q
i
of the Nb resonator increases from 5.6 × 10
5
to 7.9 × 10
5
at low input power and from 6.8 × 10
6
to 1.1 × 10
7
at high input power. Furthermore, the TiN capping layer also shows good aging resistance in Nb resonator devices, with no significant performance fluctuations after one month of aging. These findings highlight the effectiveness of TiN capping layers in enhancing the performance and longevity of Nb superconducting quantum devices.</description><subject>anti-aging</subject><subject>dielectric loss</subject><subject>Nb superconducting quantum circuits</subject><subject>oxidation</subject><issn>1674-1056</issn><issn>2058-3834</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp1kEtPwzAQhC0EEqVw5-gfgOluHOdxRBXQSlW5FK6W60flqk2CHR_670kUxI3TjjT7rXaGkEeEZ4SqWmBR5gxBFAtlCsX1FZllICrGK55fk9mffUvuYjwCFAgZn5GvdcOi7xM1tmsHYQ1VTe-ZOvjmQHd-S7XqulGf1MUG6tpAt3saU2eDbhuTdD-a32mg0plqH3TyfbwnN06don34nXPy-fa6W67Y5uN9vXzZMI0F7xli7coKamNKdAJyk6sCRV0LC6VyNkcEaxRADQKNFjUarkqT8WpvLSAKPicw3dWhjTFYJ7vgzypcJIIce5FjcDkGl1MvA_I0Ib7t5LFNoRke_H_9BwCpZOY</recordid><startdate>20240901</startdate><enddate>20240901</enddate><creator>Tao, Hao-Ran</creator><creator>Du, Lei</creator><creator>Guo, Liang-Liang</creator><creator>Chen, Yong</creator><creator>Zhang, Hai-Feng</creator><creator>Yang, Xiao-Yan</creator><creator>Xu, Guo-Liang</creator><creator>Zhang, Chi</creator><creator>Jia, Zhi-Long</creator><creator>Duan, Peng</creator><creator>Guo, Guo-Ping</creator><general>Chinese Physical Society and IOP Publishing Ltd</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20240901</creationdate><title>In-situ deposited anti-aging TiN capping layer for Nb superconducting quantum circuits</title><author>Tao, Hao-Ran ; Du, Lei ; Guo, Liang-Liang ; Chen, Yong ; Zhang, Hai-Feng ; Yang, Xiao-Yan ; Xu, Guo-Liang ; Zhang, Chi ; Jia, Zhi-Long ; Duan, Peng ; Guo, Guo-Ping</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c163t-119f7809dd71f504d4a615995e07afe4110eda009051dc591d3a7d238bee01153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>anti-aging</topic><topic>dielectric loss</topic><topic>Nb superconducting quantum circuits</topic><topic>oxidation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tao, Hao-Ran</creatorcontrib><creatorcontrib>Du, Lei</creatorcontrib><creatorcontrib>Guo, Liang-Liang</creatorcontrib><creatorcontrib>Chen, Yong</creatorcontrib><creatorcontrib>Zhang, Hai-Feng</creatorcontrib><creatorcontrib>Yang, Xiao-Yan</creatorcontrib><creatorcontrib>Xu, Guo-Liang</creatorcontrib><creatorcontrib>Zhang, Chi</creatorcontrib><creatorcontrib>Jia, Zhi-Long</creatorcontrib><creatorcontrib>Duan, Peng</creatorcontrib><creatorcontrib>Guo, Guo-Ping</creatorcontrib><collection>CrossRef</collection><jtitle>Chinese physics B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tao, Hao-Ran</au><au>Du, Lei</au><au>Guo, Liang-Liang</au><au>Chen, Yong</au><au>Zhang, Hai-Feng</au><au>Yang, Xiao-Yan</au><au>Xu, Guo-Liang</au><au>Zhang, Chi</au><au>Jia, Zhi-Long</au><au>Duan, Peng</au><au>Guo, Guo-Ping</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>In-situ deposited anti-aging TiN capping layer for Nb superconducting quantum circuits</atitle><jtitle>Chinese physics B</jtitle><addtitle>Chin. Phys. B</addtitle><date>2024-09-01</date><risdate>2024</risdate><volume>33</volume><issue>9</issue><spage>90310</spage><pages>90310-</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><abstract>The performance of Nb superconducting quantum devices is predominantly limited by dielectric loss at the metal–air interface, where Nb
2
O
5
is considered the main loss source. Here, we suppress the formation of native oxides by
in-situ
deposition of a TiN capping layer on the Nb film. With TiN capping layers, no Nb
2
O
5
forms on the surface of the Nb film. The quality factor
Q
i
of the Nb resonator increases from 5.6 × 10
5
to 7.9 × 10
5
at low input power and from 6.8 × 10
6
to 1.1 × 10
7
at high input power. Furthermore, the TiN capping layer also shows good aging resistance in Nb resonator devices, with no significant performance fluctuations after one month of aging. These findings highlight the effectiveness of TiN capping layers in enhancing the performance and longevity of Nb superconducting quantum devices.</abstract><pub>Chinese Physical Society and IOP Publishing Ltd</pub><doi>10.1088/1674-1056/ad6a3c</doi><tpages>5</tpages></addata></record> |
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| ispartof | Chinese physics B, 2024-09, Vol.33 (9), p.90310 |
| issn | 1674-1056 2058-3834 |
| language | eng |
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| source | IOP Publishing Current Journals |
| subjects | anti-aging dielectric loss Nb superconducting quantum circuits oxidation |
| title | In-situ deposited anti-aging TiN capping layer for Nb superconducting quantum circuits |
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