Facile integration of an Al-rich Al 1–x In x N photodetector on free-standing GaN by radio-frequency magnetron sputtering

Al 1− x In x N, a III-nitride semiconductor material, is currently of great research interest due to its remarkable physical properties and chemical stability. When the Al and In compositions are tuned, its band-gap energy varies from 0.7 eV to 6.2 eV, which shows great potential for application in...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Chinese physics B 2023-11, Vol.32 (11), p.117701
Hauptverfasser:	Liu 刘, Xinke 新科, Lin 林, Zhichen 之晨, Lin 林, Yuheng 钰恒, Chen 陈, Jianjin 建金, Zou 邹, Ping 苹, Zhou 周, Jie 杰, Li 李, Bo 博, Shen 沈, Longhai 龙海, Zhu 朱, Deliang 德亮, Liu 刘, Qiang 强, Yu 俞, Wenjie 文杰, Li 黎, Xiaohua 晓华, Gu 顾, Hong 泓, Wang 王, Xinzhong 新中, Huang 黄, Shuangwu 双武
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!