Facile integration of an Al-rich Al 1–x In x N photodetector on free-standing GaN by radio-frequency magnetron sputtering
Al 1− x In x N, a III-nitride semiconductor material, is currently of great research interest due to its remarkable physical properties and chemical stability. When the Al and In compositions are tuned, its band-gap energy varies from 0.7 eV to 6.2 eV, which shows great potential for application in...
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| Veröffentlicht in: | Chinese physics B 2023-11, Vol.32 (11), p.117701 |
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| creator | Liu 刘, Xinke 新科 Lin 林, Zhichen 之晨 Lin 林, Yuheng 钰恒 Chen 陈, Jianjin 建金 Zou 邹, Ping 苹 Zhou 周, Jie 杰 Li 李, Bo 博 Shen 沈, Longhai 龙海 Zhu 朱, Deliang 德亮 Liu 刘, Qiang 强 Yu 俞, Wenjie 文杰 Li 黎, Xiaohua 晓华 Gu 顾, Hong 泓 Wang 王, Xinzhong 新中 Huang 黄, Shuangwu 双武 |
| description | Al
1−
x
In
x
N, a III-nitride semiconductor material, is currently of great research interest due to its remarkable physical properties and chemical stability. When the Al and In compositions are tuned, its band-gap energy varies from 0.7 eV to 6.2 eV, which shows great potential for application in photodetectors. Here, we report the fabrication and performance evaluation of integrated Al
1−
x
In
x
N on a free-standing GaN substrate through direct radio-frequency magnetron sputtering. The optical properties of Al
1−
x
In
x
N will be enhanced by the polarization effect of a heterostructure composed of Al
1−
x
In
x
N and other III-nitride materials. An Al
1−
x
In
x
N/GaN visible-light photodetector was prepared by semiconductor fabrication technologies such as lithography and metal deposition. The highest photoresponsivity achieved was 1.52 A⋅W
−1
under 365 nm wavelength illumination and the photodetector was determined to have the composition Al
0.75
In
0.25
N/GaN. A rise time of 0.55 s was observed after transient analysis of the device. The prepared Al
1−
x
In
x
N visible-light photodetector had a low dark current, high photoresponsivity and fast response speed. By promoting a low-cost, simple fabrication method, this study expands the application of ternary alloy Al
1−
x
In
x
N visible-light photodetectors in optical communication. |
| doi_str_mv | 10.1088/1674-1056/acbf25 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1088_1674_1056_acbf25</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1088_1674_1056_acbf25</sourcerecordid><originalsourceid>FETCH-LOGICAL-c885-3d5ba1676b360d899177cf39b6ba6f3798043f9c438d5c0680d6c92ec8a587cb3</originalsourceid><addsrcrecordid>eNo9kE1OAjEAhRujiYjuXfYClXY67XSWhAiSENywn_QXaqDFtiQQN97BG3oShmBcvcX78vLyAfBM8AvBQowIb2pEMOMjqZWr2A0YVJgJRAWtb8Hgv74HDzl_YMwJrugAfE2l9lsLfSh2nWTxMcDooAxwvEXJ602fkPx-_xzhPMAjXML9JpZobLG6xAR73CVrUS4yGB_WcCaXUJ1gksZH1FefBxv0Ce7kOtiSejzvD6XY1LOP4M7JbbZPfzkEq-nravKGFu-z-WS8QFoIhqhhSvb3uaIcG9G2pGm0o63iSnJHm1bgmrpW11QYpjEX2HDdVlYLyUSjFR0CfJ3VKeacrOv2ye9kOnUEdxd33UVOd5HTXd3RM60nZHU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Facile integration of an Al-rich Al 1–x In x N photodetector on free-standing GaN by radio-frequency magnetron sputtering</title><source>IOP Publishing Journals</source><creator>Liu 刘, Xinke 新科 ; Lin 林, Zhichen 之晨 ; Lin 林, Yuheng 钰恒 ; Chen 陈, Jianjin 建金 ; Zou 邹, Ping 苹 ; Zhou 周, Jie 杰 ; Li 李, Bo 博 ; Shen 沈, Longhai 龙海 ; Zhu 朱, Deliang 德亮 ; Liu 刘, Qiang 强 ; Yu 俞, Wenjie 文杰 ; Li 黎, Xiaohua 晓华 ; Gu 顾, Hong 泓 ; Wang 王, Xinzhong 新中 ; Huang 黄, Shuangwu 双武</creator><creatorcontrib>Liu 刘, Xinke 新科 ; Lin 林, Zhichen 之晨 ; Lin 林, Yuheng 钰恒 ; Chen 陈, Jianjin 建金 ; Zou 邹, Ping 苹 ; Zhou 周, Jie 杰 ; Li 李, Bo 博 ; Shen 沈, Longhai 龙海 ; Zhu 朱, Deliang 德亮 ; Liu 刘, Qiang 强 ; Yu 俞, Wenjie 文杰 ; Li 黎, Xiaohua 晓华 ; Gu 顾, Hong 泓 ; Wang 王, Xinzhong 新中 ; Huang 黄, Shuangwu 双武</creatorcontrib><description>Al
1−
x
In
x
N, a III-nitride semiconductor material, is currently of great research interest due to its remarkable physical properties and chemical stability. When the Al and In compositions are tuned, its band-gap energy varies from 0.7 eV to 6.2 eV, which shows great potential for application in photodetectors. Here, we report the fabrication and performance evaluation of integrated Al
1−
x
In
x
N on a free-standing GaN substrate through direct radio-frequency magnetron sputtering. The optical properties of Al
1−
x
In
x
N will be enhanced by the polarization effect of a heterostructure composed of Al
1−
x
In
x
N and other III-nitride materials. An Al
1−
x
In
x
N/GaN visible-light photodetector was prepared by semiconductor fabrication technologies such as lithography and metal deposition. The highest photoresponsivity achieved was 1.52 A⋅W
−1
under 365 nm wavelength illumination and the photodetector was determined to have the composition Al
0.75
In
0.25
N/GaN. A rise time of 0.55 s was observed after transient analysis of the device. The prepared Al
1−
x
In
x
N visible-light photodetector had a low dark current, high photoresponsivity and fast response speed. By promoting a low-cost, simple fabrication method, this study expands the application of ternary alloy Al
1−
x
In
x
N visible-light photodetectors in optical communication.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><identifier>DOI: 10.1088/1674-1056/acbf25</identifier><language>eng</language><ispartof>Chinese physics B, 2023-11, Vol.32 (11), p.117701</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c885-3d5ba1676b360d899177cf39b6ba6f3798043f9c438d5c0680d6c92ec8a587cb3</citedby><cites>FETCH-LOGICAL-c885-3d5ba1676b360d899177cf39b6ba6f3798043f9c438d5c0680d6c92ec8a587cb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Liu 刘, Xinke 新科</creatorcontrib><creatorcontrib>Lin 林, Zhichen 之晨</creatorcontrib><creatorcontrib>Lin 林, Yuheng 钰恒</creatorcontrib><creatorcontrib>Chen 陈, Jianjin 建金</creatorcontrib><creatorcontrib>Zou 邹, Ping 苹</creatorcontrib><creatorcontrib>Zhou 周, Jie 杰</creatorcontrib><creatorcontrib>Li 李, Bo 博</creatorcontrib><creatorcontrib>Shen 沈, Longhai 龙海</creatorcontrib><creatorcontrib>Zhu 朱, Deliang 德亮</creatorcontrib><creatorcontrib>Liu 刘, Qiang 强</creatorcontrib><creatorcontrib>Yu 俞, Wenjie 文杰</creatorcontrib><creatorcontrib>Li 黎, Xiaohua 晓华</creatorcontrib><creatorcontrib>Gu 顾, Hong 泓</creatorcontrib><creatorcontrib>Wang 王, Xinzhong 新中</creatorcontrib><creatorcontrib>Huang 黄, Shuangwu 双武</creatorcontrib><title>Facile integration of an Al-rich Al 1–x In x N photodetector on free-standing GaN by radio-frequency magnetron sputtering</title><title>Chinese physics B</title><description>Al
1−
x
In
x
N, a III-nitride semiconductor material, is currently of great research interest due to its remarkable physical properties and chemical stability. When the Al and In compositions are tuned, its band-gap energy varies from 0.7 eV to 6.2 eV, which shows great potential for application in photodetectors. Here, we report the fabrication and performance evaluation of integrated Al
1−
x
In
x
N on a free-standing GaN substrate through direct radio-frequency magnetron sputtering. The optical properties of Al
1−
x
In
x
N will be enhanced by the polarization effect of a heterostructure composed of Al
1−
x
In
x
N and other III-nitride materials. An Al
1−
x
In
x
N/GaN visible-light photodetector was prepared by semiconductor fabrication technologies such as lithography and metal deposition. The highest photoresponsivity achieved was 1.52 A⋅W
−1
under 365 nm wavelength illumination and the photodetector was determined to have the composition Al
0.75
In
0.25
N/GaN. A rise time of 0.55 s was observed after transient analysis of the device. The prepared Al
1−
x
In
x
N visible-light photodetector had a low dark current, high photoresponsivity and fast response speed. By promoting a low-cost, simple fabrication method, this study expands the application of ternary alloy Al
1−
x
In
x
N visible-light photodetectors in optical communication.</description><issn>1674-1056</issn><issn>2058-3834</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNo9kE1OAjEAhRujiYjuXfYClXY67XSWhAiSENywn_QXaqDFtiQQN97BG3oShmBcvcX78vLyAfBM8AvBQowIb2pEMOMjqZWr2A0YVJgJRAWtb8Hgv74HDzl_YMwJrugAfE2l9lsLfSh2nWTxMcDooAxwvEXJ602fkPx-_xzhPMAjXML9JpZobLG6xAR73CVrUS4yGB_WcCaXUJ1gksZH1FefBxv0Ce7kOtiSejzvD6XY1LOP4M7JbbZPfzkEq-nravKGFu-z-WS8QFoIhqhhSvb3uaIcG9G2pGm0o63iSnJHm1bgmrpW11QYpjEX2HDdVlYLyUSjFR0CfJ3VKeacrOv2ye9kOnUEdxd33UVOd5HTXd3RM60nZHU</recordid><startdate>20231101</startdate><enddate>20231101</enddate><creator>Liu 刘, Xinke 新科</creator><creator>Lin 林, Zhichen 之晨</creator><creator>Lin 林, Yuheng 钰恒</creator><creator>Chen 陈, Jianjin 建金</creator><creator>Zou 邹, Ping 苹</creator><creator>Zhou 周, Jie 杰</creator><creator>Li 李, Bo 博</creator><creator>Shen 沈, Longhai 龙海</creator><creator>Zhu 朱, Deliang 德亮</creator><creator>Liu 刘, Qiang 强</creator><creator>Yu 俞, Wenjie 文杰</creator><creator>Li 黎, Xiaohua 晓华</creator><creator>Gu 顾, Hong 泓</creator><creator>Wang 王, Xinzhong 新中</creator><creator>Huang 黄, Shuangwu 双武</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20231101</creationdate><title>Facile integration of an Al-rich Al 1–x In x N photodetector on free-standing GaN by radio-frequency magnetron sputtering</title><author>Liu 刘, Xinke 新科 ; Lin 林, Zhichen 之晨 ; Lin 林, Yuheng 钰恒 ; Chen 陈, Jianjin 建金 ; Zou 邹, Ping 苹 ; Zhou 周, Jie 杰 ; Li 李, Bo 博 ; Shen 沈, Longhai 龙海 ; Zhu 朱, Deliang 德亮 ; Liu 刘, Qiang 强 ; Yu 俞, Wenjie 文杰 ; Li 黎, Xiaohua 晓华 ; Gu 顾, Hong 泓 ; Wang 王, Xinzhong 新中 ; Huang 黄, Shuangwu 双武</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c885-3d5ba1676b360d899177cf39b6ba6f3798043f9c438d5c0680d6c92ec8a587cb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu 刘, Xinke 新科</creatorcontrib><creatorcontrib>Lin 林, Zhichen 之晨</creatorcontrib><creatorcontrib>Lin 林, Yuheng 钰恒</creatorcontrib><creatorcontrib>Chen 陈, Jianjin 建金</creatorcontrib><creatorcontrib>Zou 邹, Ping 苹</creatorcontrib><creatorcontrib>Zhou 周, Jie 杰</creatorcontrib><creatorcontrib>Li 李, Bo 博</creatorcontrib><creatorcontrib>Shen 沈, Longhai 龙海</creatorcontrib><creatorcontrib>Zhu 朱, Deliang 德亮</creatorcontrib><creatorcontrib>Liu 刘, Qiang 强</creatorcontrib><creatorcontrib>Yu 俞, Wenjie 文杰</creatorcontrib><creatorcontrib>Li 黎, Xiaohua 晓华</creatorcontrib><creatorcontrib>Gu 顾, Hong 泓</creatorcontrib><creatorcontrib>Wang 王, Xinzhong 新中</creatorcontrib><creatorcontrib>Huang 黄, Shuangwu 双武</creatorcontrib><collection>CrossRef</collection><jtitle>Chinese physics B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu 刘, Xinke 新科</au><au>Lin 林, Zhichen 之晨</au><au>Lin 林, Yuheng 钰恒</au><au>Chen 陈, Jianjin 建金</au><au>Zou 邹, Ping 苹</au><au>Zhou 周, Jie 杰</au><au>Li 李, Bo 博</au><au>Shen 沈, Longhai 龙海</au><au>Zhu 朱, Deliang 德亮</au><au>Liu 刘, Qiang 强</au><au>Yu 俞, Wenjie 文杰</au><au>Li 黎, Xiaohua 晓华</au><au>Gu 顾, Hong 泓</au><au>Wang 王, Xinzhong 新中</au><au>Huang 黄, Shuangwu 双武</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Facile integration of an Al-rich Al 1–x In x N photodetector on free-standing GaN by radio-frequency magnetron sputtering</atitle><jtitle>Chinese physics B</jtitle><date>2023-11-01</date><risdate>2023</risdate><volume>32</volume><issue>11</issue><spage>117701</spage><pages>117701-</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><abstract>Al
1−
x
In
x
N, a III-nitride semiconductor material, is currently of great research interest due to its remarkable physical properties and chemical stability. When the Al and In compositions are tuned, its band-gap energy varies from 0.7 eV to 6.2 eV, which shows great potential for application in photodetectors. Here, we report the fabrication and performance evaluation of integrated Al
1−
x
In
x
N on a free-standing GaN substrate through direct radio-frequency magnetron sputtering. The optical properties of Al
1−
x
In
x
N will be enhanced by the polarization effect of a heterostructure composed of Al
1−
x
In
x
N and other III-nitride materials. An Al
1−
x
In
x
N/GaN visible-light photodetector was prepared by semiconductor fabrication technologies such as lithography and metal deposition. The highest photoresponsivity achieved was 1.52 A⋅W
−1
under 365 nm wavelength illumination and the photodetector was determined to have the composition Al
0.75
In
0.25
N/GaN. A rise time of 0.55 s was observed after transient analysis of the device. The prepared Al
1−
x
In
x
N visible-light photodetector had a low dark current, high photoresponsivity and fast response speed. By promoting a low-cost, simple fabrication method, this study expands the application of ternary alloy Al
1−
x
In
x
N visible-light photodetectors in optical communication.</abstract><doi>10.1088/1674-1056/acbf25</doi></addata></record> |
| fulltext | fulltext |
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| ispartof | Chinese physics B, 2023-11, Vol.32 (11), p.117701 |
| issn | 1674-1056 2058-3834 |
| language | eng |
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| source | IOP Publishing Journals |
| title | Facile integration of an Al-rich Al 1–x In x N photodetector on free-standing GaN by radio-frequency magnetron sputtering |
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