Study on a novel vertical enhancement-mode Ga 2 O 3 MOSFET with FINFET structure

A novel enhanced mode (E-mode) Ga 2 O 3 metal–oxide–semiconductor field-effect transistor (MOSFET) with vertical FINFET structure is proposed and the characteristics of that device are numerically investigated. It is found that the concentration of the source region and the width coupled with the he...

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Veröffentlicht in:	Chinese physics B 2022-01, Vol.31 (1), p.17304
Hauptverfasser:	Guo, Liangliang, Zhang, Yuming, Luan, Suzhen, Qiao, Rundi, Jia, Renxu
Format:	Artikel
Sprache:	eng
Schlagworte:	device simulation E-mode gallium oxide threshold voltage
Online-Zugang:	Volltext
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