Optical, structural, and vibrational properties of In 2 S 3 thin films by sputtering-RF for applications in optoelectronics devices

Experimental results on the crystalline orientation properties, energy band gap, and Raman vibrational modes of Indium Sulfide (In 2 S 3 ) thin films grown by Sputtering in Radio Frequency mode are presented. The In 2 S 3 thin films were grown at 25, 200, and 300 °C; thereafter the samples were ther...

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Veröffentlicht in:	Physica scripta 2025-01, Vol.100 (1), p.15976
Hauptverfasser:	López-Sánchez, A F, Mendoza-Pérez, R, Fierro-López, J A, G Zayas-Bazan, P, Sastré-Hernández, J, Aguilar-Hernández, J R, Contreras-Puente, G S
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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