Boosting efficiency in dual-absorber RbPbBr 3 perovskite solar cell: the role of two-dimensional GeS and SnS 2 as electron transport layers

This paper presents a comprehensive investigation into the electrical characteristics of a perovskite solar cell. The n-i-p cell is based on a low band gap rubidium–lead-bromide (RbPbBr 3 ) perovskite with an energy level of 1.31 eV. The study also evaluates the impact of high mobility two-dimensional GeS and SnS 2 as electron transport layers (ETLs) on the cell’s performance. These ETLs have a wide band gap and provide a hole blocking layer due to their high valence band-offset. Additionally, a thin film MoTe 2 with a band gap of 1 eV is considered as a complementary absorber for capturing near-infrared solar spectrum. The investigation focuses on the influence of critical physical and structural design parameters on the electrical parameters of the cell. The optimized device with SnS 2 as the ETL exhibits a power conversion efficiency (PCE) of 25.03%, an open circuit voltage of 0.95 V, a short circuit current density of 33 mA cm −2 , and a fill factor of 80.31%. Similarly, the device with GeS as the ETL achieves a PCE of 25.14%, an open circuit voltage of 0.96 V, a short circuit current density of 33.01 mA cm −2 , and a fill factor of 80.66%. Furthermore, a statistical analysis is conducted by calculating the coefficient of variation to assess the sensitivity of the cell’s electrical measures to the variation of design parameters and operating temperature. The results highlight that defects in the absorber layer, work function of the back contact, and ambient temperature are critical design parameters that can significantly impact the device performance. Overall, the utilization of high mobility wide band gap ETLs, in combination with the low band gap perovskite, offers a promising approach for the design of high-performance solar cells.