Unveiling the structural and optoelectronic properties of (P, Bi, Sb)-doped GaAs by first- principles calculations

In this work, we investigate the influence of M substitutions (M = P, Bi, and Sb) on the structural, electronic, and optical properties of gallium arsenide, GaM x As 1 -x for x = 0 , 0.25 , 0.50 , 0.75 , 1.0 using density functional theory (DFT). We have observed that the cubic symmetry of the semic...

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Veröffentlicht in:	Physica scripta 2024-08, Vol.99 (8), p.85997
Hauptverfasser:	López-Rendón, María del Mar, Arellano-Ramirez, Ivan D, Gil Rebaza, Arles, Amaya-Roncancio, Sebastian, Torres-Cerón, Darwin A, Restrepo-Parra, Elisabeth
Format:	Artikel
Sprache:	eng
Schlagworte:	density functional theory doped GaAs electronic band structure optical properties Vegard's law
Online-Zugang:	Volltext
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