The study of electron mobility on ultra-scaled silicon nanosheet FET

The nanosheet FET (NSFET) is the successor to FinFET, and its mobility significantly affects device performance. In this paper, we investigate the impact of phonon (ph) and surface roughness (SR) scattering on the electron mobility of n-type silicon NSFETs. The effects of channel width, thickness, a...

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Veröffentlicht in:	Physica scripta 2024-07, Vol.99 (7), p.75410
Hauptverfasser:	Liu, Tongfei, Rezaei, Ali, Yang, Kaige, Fan, Xuge, Acharya, Pranav, Georgiev, Vihar, Asenov, Asen, Ding, Jie
Format:	Artikel
Sprache:	eng
Schlagworte:	electron mobility nanosheet FETs phonon scattering surface roughness scattering
Online-Zugang:	Volltext
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