Sn-doped β-Ga 2 O 3 thin films grown on off-axis sapphire substrates by LPCVD using Ga-Sn alloy solid source
Adopting low pressure chemical vapor deposition (LPCVD), Sn-doped β -Ga 2 O 3 thin films were heteroepitaxially grown on c-plane sapphire substrates with off-axis angles towards 〈11–20〉 direction. The influences of off-axis angle on crystal structures, electrical properties, surface morphology, and...
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| Veröffentlicht in: | Physica scripta 2024-06, Vol.99 (6), p.65417 |
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| container_title | Physica scripta |
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| creator | Yang, Han Wu, Songhao Ma, Chicheng Liu, Zichun Liu, Liwei Zhang, Yiyun Ma, Yuan Xiao Yi, Xiaoyan Wang, Junxi Wang, Yeliang |
| description | Adopting low pressure chemical vapor deposition (LPCVD), Sn-doped
β
-Ga
2
O
3
thin films were heteroepitaxially grown on c-plane sapphire substrates with off-axis angles towards 〈11–20〉 direction. The influences of off-axis angle on crystal structures, electrical properties, surface morphology, and chemical compositions were thoroughly investigated. As a result, the crystallinity of the
β
-Ga
2
O
3
films is improved with increasing off-axis angles because in-plane rotational domains are effectively suppressed, demonstrating a full width at half maximum (FWHM) down to 0.64°. Correspondingly, the Hall carrier mobility is promoted from 4.7 to 17.9 cm
2
/V·s at carrier concentration of 9 × 10
17
cm
−3
, which is believed highly competitive among reported Sn-doped
β
-Ga
2
O
3
films by LPCVD. These results demonstrate an alternative pathway to heteroepitaxially grow high electrical quality n-doped
β
-Ga
2
O
3
films for the advancement of Ga
2
O
3
materials and devices. |
| doi_str_mv | 10.1088/1402-4896/ad4e12 |
| format | Article |
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β
-Ga
2
O
3
thin films were heteroepitaxially grown on c-plane sapphire substrates with off-axis angles towards 〈11–20〉 direction. The influences of off-axis angle on crystal structures, electrical properties, surface morphology, and chemical compositions were thoroughly investigated. As a result, the crystallinity of the
β
-Ga
2
O
3
films is improved with increasing off-axis angles because in-plane rotational domains are effectively suppressed, demonstrating a full width at half maximum (FWHM) down to 0.64°. Correspondingly, the Hall carrier mobility is promoted from 4.7 to 17.9 cm
2
/V·s at carrier concentration of 9 × 10
17
cm
−3
, which is believed highly competitive among reported Sn-doped
β
-Ga
2
O
3
films by LPCVD. These results demonstrate an alternative pathway to heteroepitaxially grow high electrical quality n-doped
β
-Ga
2
O
3
films for the advancement of Ga
2
O
3
materials and devices.</description><identifier>ISSN: 0031-8949</identifier><identifier>EISSN: 1402-4896</identifier><identifier>DOI: 10.1088/1402-4896/ad4e12</identifier><language>eng</language><ispartof>Physica scripta, 2024-06, Vol.99 (6), p.65417</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-crossref_primary_10_1088_1402_4896_ad4e123</cites><orcidid>0000-0001-5884-7333 ; 0000-0001-8022-8512 ; 0000-0002-1419-485X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Yang, Han</creatorcontrib><creatorcontrib>Wu, Songhao</creatorcontrib><creatorcontrib>Ma, Chicheng</creatorcontrib><creatorcontrib>Liu, Zichun</creatorcontrib><creatorcontrib>Liu, Liwei</creatorcontrib><creatorcontrib>Zhang, Yiyun</creatorcontrib><creatorcontrib>Ma, Yuan Xiao</creatorcontrib><creatorcontrib>Yi, Xiaoyan</creatorcontrib><creatorcontrib>Wang, Junxi</creatorcontrib><creatorcontrib>Wang, Yeliang</creatorcontrib><title>Sn-doped β-Ga 2 O 3 thin films grown on off-axis sapphire substrates by LPCVD using Ga-Sn alloy solid source</title><title>Physica scripta</title><description>Adopting low pressure chemical vapor deposition (LPCVD), Sn-doped
β
-Ga
2
O
3
thin films were heteroepitaxially grown on c-plane sapphire substrates with off-axis angles towards 〈11–20〉 direction. The influences of off-axis angle on crystal structures, electrical properties, surface morphology, and chemical compositions were thoroughly investigated. As a result, the crystallinity of the
β
-Ga
2
O
3
films is improved with increasing off-axis angles because in-plane rotational domains are effectively suppressed, demonstrating a full width at half maximum (FWHM) down to 0.64°. Correspondingly, the Hall carrier mobility is promoted from 4.7 to 17.9 cm
2
/V·s at carrier concentration of 9 × 10
17
cm
−3
, which is believed highly competitive among reported Sn-doped
β
-Ga
2
O
3
films by LPCVD. These results demonstrate an alternative pathway to heteroepitaxially grow high electrical quality n-doped
β
-Ga
2
O
3
films for the advancement of Ga
2
O
3
materials and devices.</description><issn>0031-8949</issn><issn>1402-4896</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNqdz01qwzAQBWARWoj7s89yLqBmJBtjr9M2XRQaSOlWKLGUKMiS0di0vlYP0jM1pqUHKAxv4MFbfIwtBN4JrKqlKFDyoqrLpW4KI-SMZX_VBcsQc8Gruqjn7IrohChLWdYZa7eBN7EzDXx98rUGCS-QQ390AazzLcEhxfcA8XzWcv3hCEh33dElAzTsqE-6NwS7EZ43q7d7GMiFA6w13wbQ3scRKHrXnHNIe3PDLq32ZG5__zXDx4fX1RPfp0iUjFVdcq1OoxKoJpaaDGoyqB9W_o_JN6xDVdY</recordid><startdate>20240601</startdate><enddate>20240601</enddate><creator>Yang, Han</creator><creator>Wu, Songhao</creator><creator>Ma, Chicheng</creator><creator>Liu, Zichun</creator><creator>Liu, Liwei</creator><creator>Zhang, Yiyun</creator><creator>Ma, Yuan Xiao</creator><creator>Yi, Xiaoyan</creator><creator>Wang, Junxi</creator><creator>Wang, Yeliang</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-5884-7333</orcidid><orcidid>https://orcid.org/0000-0001-8022-8512</orcidid><orcidid>https://orcid.org/0000-0002-1419-485X</orcidid></search><sort><creationdate>20240601</creationdate><title>Sn-doped β-Ga 2 O 3 thin films grown on off-axis sapphire substrates by LPCVD using Ga-Sn alloy solid source</title><author>Yang, Han ; Wu, Songhao ; Ma, Chicheng ; Liu, Zichun ; Liu, Liwei ; Zhang, Yiyun ; Ma, Yuan Xiao ; Yi, Xiaoyan ; Wang, Junxi ; Wang, Yeliang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-crossref_primary_10_1088_1402_4896_ad4e123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Han</creatorcontrib><creatorcontrib>Wu, Songhao</creatorcontrib><creatorcontrib>Ma, Chicheng</creatorcontrib><creatorcontrib>Liu, Zichun</creatorcontrib><creatorcontrib>Liu, Liwei</creatorcontrib><creatorcontrib>Zhang, Yiyun</creatorcontrib><creatorcontrib>Ma, Yuan Xiao</creatorcontrib><creatorcontrib>Yi, Xiaoyan</creatorcontrib><creatorcontrib>Wang, Junxi</creatorcontrib><creatorcontrib>Wang, Yeliang</creatorcontrib><collection>CrossRef</collection><jtitle>Physica scripta</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Han</au><au>Wu, Songhao</au><au>Ma, Chicheng</au><au>Liu, Zichun</au><au>Liu, Liwei</au><au>Zhang, Yiyun</au><au>Ma, Yuan Xiao</au><au>Yi, Xiaoyan</au><au>Wang, Junxi</au><au>Wang, Yeliang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sn-doped β-Ga 2 O 3 thin films grown on off-axis sapphire substrates by LPCVD using Ga-Sn alloy solid source</atitle><jtitle>Physica scripta</jtitle><date>2024-06-01</date><risdate>2024</risdate><volume>99</volume><issue>6</issue><spage>65417</spage><pages>65417-</pages><issn>0031-8949</issn><eissn>1402-4896</eissn><abstract>Adopting low pressure chemical vapor deposition (LPCVD), Sn-doped
β
-Ga
2
O
3
thin films were heteroepitaxially grown on c-plane sapphire substrates with off-axis angles towards 〈11–20〉 direction. The influences of off-axis angle on crystal structures, electrical properties, surface morphology, and chemical compositions were thoroughly investigated. As a result, the crystallinity of the
β
-Ga
2
O
3
films is improved with increasing off-axis angles because in-plane rotational domains are effectively suppressed, demonstrating a full width at half maximum (FWHM) down to 0.64°. Correspondingly, the Hall carrier mobility is promoted from 4.7 to 17.9 cm
2
/V·s at carrier concentration of 9 × 10
17
cm
−3
, which is believed highly competitive among reported Sn-doped
β
-Ga
2
O
3
films by LPCVD. These results demonstrate an alternative pathway to heteroepitaxially grow high electrical quality n-doped
β
-Ga
2
O
3
films for the advancement of Ga
2
O
3
materials and devices.</abstract><doi>10.1088/1402-4896/ad4e12</doi><orcidid>https://orcid.org/0000-0001-5884-7333</orcidid><orcidid>https://orcid.org/0000-0001-8022-8512</orcidid><orcidid>https://orcid.org/0000-0002-1419-485X</orcidid></addata></record> |
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| ispartof | Physica scripta, 2024-06, Vol.99 (6), p.65417 |
| issn | 0031-8949 1402-4896 |
| language | eng |
| recordid | cdi_crossref_primary_10_1088_1402_4896_ad4e12 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Sn-doped β-Ga 2 O 3 thin films grown on off-axis sapphire substrates by LPCVD using Ga-Sn alloy solid source |
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