Thermal transport mechanism of 4H–SiC/SiO 2 heterostructures: a molecular dynamics study

Silicon carbide (SiC) is widely used in high-frequency, high-speed, and high-power applications such as power electronics, rail transportation, new energy vehicles, and aerospace. However, the thermal properties of the SiC/SiO 2 interface, which is commonly found in SiC-based devices, are not yet fu...

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Veröffentlicht in:	Physica scripta 2024-01, Vol.99 (1), p.15936
Hauptverfasser:	Xiao, Chengdi, Xing, Zhenguo, Shu, Wenqiang, Zhang, Haitao, Rao, Xixin
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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