Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe 5 crystals

Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe 5 crystals

Magneto-transport study has been performed in ZrTe 5 single crystals. The observed Shubnikov–de Hass quantum oscillation at low temperature clearly demonstrates the existence of a nontrivial band with small effective mass in ZrTe 5 . Furthermore, we also revealed the highly anisotropic nature of hig...

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Veröffentlicht in:New journal of physics 2019-09, Vol.21 (9), p.93009
Hauptverfasser: Zhou, L, Ramiere, A, Chen, P B, Tang, J Y, Wu, Y H, Lei, X, Guo, G P, He, J Q, He, H T
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container_issue 9
container_start_page 93009
container_title New journal of physics
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creator Zhou, L
Ramiere, A
Chen, P B
Tang, J Y
Wu, Y H
Lei, X
Guo, G P
He, J Q
He, H T
description Magneto-transport study has been performed in ZrTe 5 single crystals. The observed Shubnikov–de Hass quantum oscillation at low temperature clearly demonstrates the existence of a nontrivial band with small effective mass in ZrTe 5 . Furthermore, we also revealed the highly anisotropic nature of high-field Landau level splitting in ZrTe 5 , suggesting the dominant role of orbital contribution to the splitting. Besides these, an abnormal large enhancement of magnetoresistance appears at high temperatures, which is believed to arise from the Lifshitz transition induced two-carrier transport in ZrTe 5 . Our study provides more understanding of the physical properties of ZrTe 5 and sheds light on potential application of ZrTe 5 in spintronics.
doi_str_mv 10.1088/1367-2630/ab3dbb
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title Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe 5 crystals
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