Investigations into the robustness of the peak turn-on current slope method for junction temperature sensing in p-GaN HEMTs

In this paper, the robustness of a junction temperature sensing method using the peak of the turn-on current slope for enhanced p-GaN high-electron-mobility transistors is investigated in detail. With the help of a repetitive hard-switching test platform, compared to other temperature-sensitive elec...

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Veröffentlicht in:	Semiconductor science and technology 2024-10, Vol.39 (10), p.105001
Hauptverfasser:	Lu, Weihao, Li, Sheng, Ye, Ran, Mao, Weixiong, Zhang, Zikang, Ma, Yanfeng, Li, Mingfei, Wei, Jiaxing, Zhang, Long, Ma, Jie, Liu, Siyang, Sun, Weifeng
Format:	Artikel
Sprache:	eng
Schlagworte:	junction temperature peak of current slope power GaN devices switching stress induced degradation
Online-Zugang:	Volltext
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