Permittivity modulation in Si-based PIN diode by electron irradiation

In this paper, we investigate the influence of defects induced by different doses of electron irradiation on the real part of permittivity of Si-based PIN diodes with a deep-level transient spectrum test. For a more precise result, the relationship between the real part of the permittivity of the sa...

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Veröffentlicht in:	Semiconductor science and technology 2022-09, Vol.37 (9), p.95022
Hauptverfasser:	Wang, Yisong, Gong, Min, Li, Yun, Yang, Zhimei, Rong, Chenshuo, Huang, Mingmin, Ma, Yao, Li, Jianghuan
Format:	Artikel
Sprache:	eng
Schlagworte:	annealing defect electron irradiation permittivity temperature effect
Online-Zugang:	Volltext
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