Implementing variable doping and work function engineering in β-Ga 2 O 3 MOSFET to realize high breakdown voltage and PfoM

In this paper, the impact of workfunction engineering and lightly doped region near drain has been studied on lateral β -Ga 2 O 3 metal oxide semiconductor field effect transistor (MOSFET) by employing exhaustive technology computer aided design simulations. The theoretically predicted value of brea...

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Veröffentlicht in:	Semiconductor science and technology 2022-04, Vol.37 (4), p.45018
Hauptverfasser:	Goyal, Priyanshi, Kaur, Harsupreet
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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