Inhomogeneity-mediated systematic reduction of the Schottky barrier in a Au/GaN nanorod film interface

Self-aligned GaN nanorods of various densities are grown on an r-plane Al2O3 substrate with Stranski-Krastanov or layer-plus-island growth conditions by using a plasma-assisted molecular beam epitaxy system. These conditions result in the formation of a GaN nanorod matrix on an epitaxial GaN thin fi...

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Veröffentlicht in:	Semiconductor science and technology 2021-01, Vol.36 (1), p.15017
Hauptverfasser:	Pant, Rohit Kumar, Roul, Basanta, Kumar Singh, Deependra, Chowdhury, Arun Malla, Nanda, K K, Krupanidhi, S B
Format:	Artikel
Sprache:	eng
Schlagworte:	molecular beam epitaxy nanorods nonpolar Ohmic plane GaN Schottky
Online-Zugang:	Volltext
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