Electrical characteristics of bendable a-ITGZO TFTs on colorless polyimide substrates

In this study, we fabricate amorphous indium tin gallium zinc oxide (a-ITGZO) thin-film transistors (TFTs) on colorless polyimide (CPI) substrates and examine their electrical characteristics as functions of the bending radius. A representative a-ITGZO TFT shows typical n-type behavior and operates...

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Veröffentlicht in:	Semiconductor science and technology 2020-06, Vol.35 (6), p.65014
Hauptverfasser:	Lee, Hosang, Cho, Kyoungah, Kim, Donghyun, Kim, Sangsig
Format:	Artikel
Sprache:	eng
Schlagworte:	amorphous indium tin gallium zinc oxide bendable oxide thin-film transistors bending radius colorless polyimide compressive stress tensile stress
Online-Zugang:	Volltext
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