Terahertz shielding properties of aero-GaN

The electrodynamic properties of the first aero-material based on compound semiconductor, namely of Aero-GaN, in the terahertz frequency region are experimentally investigated. Spectra of complex dielectric permittivity, refractive index, surface impedance are measured at frequencies 4-100 cm−1 and...

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Veröffentlicht in:Semiconductor science and technology 2019-12, Vol.34 (12), p.12
Hauptverfasser: Braniste, Tudor, Zhukov, Sergey, Dragoman, Mircea, Alyabyeva, Liudmila, Ciobanu, Vladimir, Aldrigo, Martino, Dragoman, Daniela, Iordanescu, Sergiu, Shree, Sindu, Raevschi, Simion, Adelung, Rainer, Gorshunov, Boris, Tiginyanu, Ion
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Sprache:eng
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Zusammenfassung:The electrodynamic properties of the first aero-material based on compound semiconductor, namely of Aero-GaN, in the terahertz frequency region are experimentally investigated. Spectra of complex dielectric permittivity, refractive index, surface impedance are measured at frequencies 4-100 cm−1 and in the temperature interval 4-300 K. The shielding properties are found based on experimental data. The aero-material shows excellent shielding effectiveness in the frequency range from 0.1 to 1.3 THz, exceeding 40 dB in a huge frequency bandwidth, which is of high interest for industrial applications. These results place the aero-GaN among the best THz shielding materials known today.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ab4e58