Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs

This work analyzes the effect of various gate structures on the DC and radio frequency (RF) performance of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMT devices with a 3 m drain-to-source spacing, 125 m gate width and 0.3 m gate length in various gate structures were fabricate...

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Veröffentlicht in:	Semiconductor science and technology 2018-12, Vol.33 (12), p.125017
Hauptverfasser:	Toprak, Ahmet, Osmano lu, Sinan, Öztürk, Mustafa, Y lmaz, Do an, Cengiz, Ömer, en, Özlem, Bütün, Bayram, Özcan, adan, Özbay, Ekmel
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN field plate gamma gate GaN high-electron mobility transistor (HEMT) recessed gate
Online-Zugang:	Volltext
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