Flexible IGZO Schottky diodes on paper

Flexible IGZO Schottky diodes on paper

With the development of novel device applications, e.g. in the field of robust and recyclable paper electronics, came an increased demand for the understanding and control of IGZO Schottky contact properties. In this work, a fabrication and characterization of flexible Ru-Si-O/IGZO Schottky barriers...

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Veröffentlicht in:Semiconductor science and technology 2018-01, Vol.33 (1), p.15010
Hauptverfasser: Kaczmarski, Jakub, Borysiewicz, Micha A, Piskorski, Krzysztof, Wzorek, Marek, Kozubal, Maciej, Kami ska, Eliana
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Sprache:eng
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flexible electronics
IGZO
In-Ga-Zn-O
paper electronics
Ru-Si-O
Schottky contacts
Schottky diodes
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container_issue 1
container_start_page 15010
container_title Semiconductor science and technology
container_volume 33
creator Kaczmarski, Jakub
Borysiewicz, Micha A
Piskorski, Krzysztof
Wzorek, Marek
Kozubal, Maciej
Kami ska, Eliana
description With the development of novel device applications, e.g. in the field of robust and recyclable paper electronics, came an increased demand for the understanding and control of IGZO Schottky contact properties. In this work, a fabrication and characterization of flexible Ru-Si-O/IGZO Schottky barriers on paper is presented. It is found that an oxygen-rich atomic composition and microstructure of Ru-Si-O containing randomly oriented Ru inclusions with diameter of 3-5 nm embedded in an amorphous SiO2 matrix are effective in preventing interfacial reactions in the contact region, allowing to avoid pre-treatment of the semiconductor surface and fabricate reliable diodes at room temperature characterized by Schottky barrier height and ideality factor equal 0.79 eV and 2.13, respectively.
doi_str_mv 10.1088/1361-6641/aa9acb
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subjects flexible electronics
IGZO
In-Ga-Zn-O
paper electronics
Ru-Si-O
Schottky contacts
Schottky diodes
title Flexible IGZO Schottky diodes on paper
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