Investigations of modulation method and stress mechanism for the growth of AlGaN channel heterostructures

In this work, the strong connection between the channel and the barrier layer of AlGaN channel heterostructures has been investigated in detail. Unlike GaN as a channel material, AlGaN channel layers significantly influence the transport characteristics and quality of AlGaN barrier layers with incre...

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Veröffentlicht in:	Nanotechnology 2025-01, Vol.36 (12), p.125703
Hauptverfasser:	Wang, Baiqi, Zhang, Yachao, Xu, Shengrui, Yao, Yixin, Liu, Wenjun, Du, Chenglin, Cai, Xiaolong, Wu, Sheng, Liu, Haijun, Zhang, Yu, Tang, Xue, Zhang, Jincheng, Hao, Yue
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN channel high Al composition mechanism MOCVD stress
Online-Zugang:	Volltext
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