Cathodoluminescence from interlayer excitons in a 2D semiconductor heterobilayer
Photoluminescence has widely been used to study excitons in semiconducting transition metal dichalcogenide (MX ) monolayers, demonstrating strong light-matter interactions and locked spin and valley degrees of freedom. In heterobilayers composed of overlapping monolayers of two different MX , an int...
Gespeichert in:
| Veröffentlicht in: | Nanotechnology 2024-08, Vol.35 (46), p.465203 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 46 |
| container_start_page | 465203 |
| container_title | Nanotechnology |
| container_volume | 35 |
| creator | Borghi, Matteo T A Wilson, Neil R |
| description | Photoluminescence has widely been used to study excitons in semiconducting transition metal dichalcogenide (MX
) monolayers, demonstrating strong light-matter interactions and locked spin and valley degrees of freedom. In heterobilayers composed of overlapping monolayers of two different MX
, an interlayer exciton can form, with the hole localised in one layer and the electron in the other. These interlayer excitons are long-lived, field-tunable, and can be trapped by moiré patterns formed at small twist angles between the layers. Here we demonstrate that emission from radiative recombination of interlayer excitons can be observed by cathodoluminescence from a WSe
/MoSe
heterobilayer encapsulated in hexagonal boron nitride. The higher spatial resolution of cathodoluminescence, compared to photoluminescence, allows detailed analysis of sample heterogeneity at the 100 s of nm lengthscales over which twist angles tend to vary in dry-transfer fabricated heterostructures. |
| doi_str_mv | 10.1088/1361-6528/ad70b3 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1088_1361_6528_ad70b3</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3094472583</sourcerecordid><originalsourceid>FETCH-LOGICAL-c219t-60fad3841e15c8f944c475e380733ca49f8136e03a97d3e5a34daa6912fcc7a63</originalsourceid><addsrcrecordid>eNp1kD1PwzAQhi0EoqWwM6GMDITasR07IyqfUiUYYLZc-6K6SuJiJxL997gEujGddHreV3cPQpcE3xIs5ZzQkuQlL-RcW4FX9AhND6tjNMUVFzljkk3QWYwbjAmRBTlFE1oRLjmTU_S20P3aW98MresgGugMZHXwbea6HkKjdxAy-DKu911Mu0xnxX0WoXXGd3YwvQ_ZGhLpV-4HPkcntW4iXPzOGfp4fHhfPOfL16eXxd0yNwWp-rzEtbZUMgKEG1lXjBkmOFCJBaVGs6qW6RPAVFfCUuCaMqt1WZGiNkboks7Q9di7Df5zgNir1qXzm0Z34IeoKE6douCSJhSPqAk-xgC12gbX6rBTBKu9R7WXpvbS1OgxRa5-24dVC_YQ-BOXgJsRcH6rNn4IXXr2_75vccB8jg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3094472583</pqid></control><display><type>article</type><title>Cathodoluminescence from interlayer excitons in a 2D semiconductor heterobilayer</title><source>Institute of Physics Journals</source><creator>Borghi, Matteo T A ; Wilson, Neil R</creator><creatorcontrib>Borghi, Matteo T A ; Wilson, Neil R</creatorcontrib><description>Photoluminescence has widely been used to study excitons in semiconducting transition metal dichalcogenide (MX
) monolayers, demonstrating strong light-matter interactions and locked spin and valley degrees of freedom. In heterobilayers composed of overlapping monolayers of two different MX
, an interlayer exciton can form, with the hole localised in one layer and the electron in the other. These interlayer excitons are long-lived, field-tunable, and can be trapped by moiré patterns formed at small twist angles between the layers. Here we demonstrate that emission from radiative recombination of interlayer excitons can be observed by cathodoluminescence from a WSe
/MoSe
heterobilayer encapsulated in hexagonal boron nitride. The higher spatial resolution of cathodoluminescence, compared to photoluminescence, allows detailed analysis of sample heterogeneity at the 100 s of nm lengthscales over which twist angles tend to vary in dry-transfer fabricated heterostructures.</description><identifier>ISSN: 0957-4484</identifier><identifier>ISSN: 1361-6528</identifier><identifier>EISSN: 1361-6528</identifier><identifier>DOI: 10.1088/1361-6528/ad70b3</identifier><identifier>PMID: 39158548</identifier><identifier>CODEN: NNOTER</identifier><language>eng</language><publisher>England: IOP Publishing</publisher><subject>cathodoluminescence ; transition metal dichalcogenide heterobilayers ; van der waals heterostructures</subject><ispartof>Nanotechnology, 2024-08, Vol.35 (46), p.465203</ispartof><rights>2024 The Author(s). Published by IOP Publishing Ltd</rights><rights>Creative Commons Attribution license.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c219t-60fad3841e15c8f944c475e380733ca49f8136e03a97d3e5a34daa6912fcc7a63</cites><orcidid>0000-0002-2592-3077</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1361-6528/ad70b3/pdf$$EPDF$$P50$$Giop$$Hfree_for_read</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/39158548$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Borghi, Matteo T A</creatorcontrib><creatorcontrib>Wilson, Neil R</creatorcontrib><title>Cathodoluminescence from interlayer excitons in a 2D semiconductor heterobilayer</title><title>Nanotechnology</title><addtitle>Nano</addtitle><addtitle>Nanotechnology</addtitle><description>Photoluminescence has widely been used to study excitons in semiconducting transition metal dichalcogenide (MX
) monolayers, demonstrating strong light-matter interactions and locked spin and valley degrees of freedom. In heterobilayers composed of overlapping monolayers of two different MX
, an interlayer exciton can form, with the hole localised in one layer and the electron in the other. These interlayer excitons are long-lived, field-tunable, and can be trapped by moiré patterns formed at small twist angles between the layers. Here we demonstrate that emission from radiative recombination of interlayer excitons can be observed by cathodoluminescence from a WSe
/MoSe
heterobilayer encapsulated in hexagonal boron nitride. The higher spatial resolution of cathodoluminescence, compared to photoluminescence, allows detailed analysis of sample heterogeneity at the 100 s of nm lengthscales over which twist angles tend to vary in dry-transfer fabricated heterostructures.</description><subject>cathodoluminescence</subject><subject>transition metal dichalcogenide heterobilayers</subject><subject>van der waals heterostructures</subject><issn>0957-4484</issn><issn>1361-6528</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>O3W</sourceid><recordid>eNp1kD1PwzAQhi0EoqWwM6GMDITasR07IyqfUiUYYLZc-6K6SuJiJxL997gEujGddHreV3cPQpcE3xIs5ZzQkuQlL-RcW4FX9AhND6tjNMUVFzljkk3QWYwbjAmRBTlFE1oRLjmTU_S20P3aW98MresgGugMZHXwbea6HkKjdxAy-DKu911Mu0xnxX0WoXXGd3YwvQ_ZGhLpV-4HPkcntW4iXPzOGfp4fHhfPOfL16eXxd0yNwWp-rzEtbZUMgKEG1lXjBkmOFCJBaVGs6qW6RPAVFfCUuCaMqt1WZGiNkboks7Q9di7Df5zgNir1qXzm0Z34IeoKE6douCSJhSPqAk-xgC12gbX6rBTBKu9R7WXpvbS1OgxRa5-24dVC_YQ-BOXgJsRcH6rNn4IXXr2_75vccB8jg</recordid><startdate>20240829</startdate><enddate>20240829</enddate><creator>Borghi, Matteo T A</creator><creator>Wilson, Neil R</creator><general>IOP Publishing</general><scope>O3W</scope><scope>TSCCA</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-2592-3077</orcidid></search><sort><creationdate>20240829</creationdate><title>Cathodoluminescence from interlayer excitons in a 2D semiconductor heterobilayer</title><author>Borghi, Matteo T A ; Wilson, Neil R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c219t-60fad3841e15c8f944c475e380733ca49f8136e03a97d3e5a34daa6912fcc7a63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>cathodoluminescence</topic><topic>transition metal dichalcogenide heterobilayers</topic><topic>van der waals heterostructures</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Borghi, Matteo T A</creatorcontrib><creatorcontrib>Wilson, Neil R</creatorcontrib><collection>Open Access: IOP Publishing Free Content</collection><collection>IOPscience (Open Access)</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Borghi, Matteo T A</au><au>Wilson, Neil R</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cathodoluminescence from interlayer excitons in a 2D semiconductor heterobilayer</atitle><jtitle>Nanotechnology</jtitle><stitle>Nano</stitle><addtitle>Nanotechnology</addtitle><date>2024-08-29</date><risdate>2024</risdate><volume>35</volume><issue>46</issue><spage>465203</spage><pages>465203-</pages><issn>0957-4484</issn><issn>1361-6528</issn><eissn>1361-6528</eissn><coden>NNOTER</coden><abstract>Photoluminescence has widely been used to study excitons in semiconducting transition metal dichalcogenide (MX
) monolayers, demonstrating strong light-matter interactions and locked spin and valley degrees of freedom. In heterobilayers composed of overlapping monolayers of two different MX
, an interlayer exciton can form, with the hole localised in one layer and the electron in the other. These interlayer excitons are long-lived, field-tunable, and can be trapped by moiré patterns formed at small twist angles between the layers. Here we demonstrate that emission from radiative recombination of interlayer excitons can be observed by cathodoluminescence from a WSe
/MoSe
heterobilayer encapsulated in hexagonal boron nitride. The higher spatial resolution of cathodoluminescence, compared to photoluminescence, allows detailed analysis of sample heterogeneity at the 100 s of nm lengthscales over which twist angles tend to vary in dry-transfer fabricated heterostructures.</abstract><cop>England</cop><pub>IOP Publishing</pub><pmid>39158548</pmid><doi>10.1088/1361-6528/ad70b3</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-2592-3077</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0957-4484 |
| ispartof | Nanotechnology, 2024-08, Vol.35 (46), p.465203 |
| issn | 0957-4484 1361-6528 1361-6528 |
| language | eng |
| recordid | cdi_crossref_primary_10_1088_1361_6528_ad70b3 |
| source | Institute of Physics Journals |
| subjects | cathodoluminescence transition metal dichalcogenide heterobilayers van der waals heterostructures |
| title | Cathodoluminescence from interlayer excitons in a 2D semiconductor heterobilayer |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T05%3A51%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Cathodoluminescence%20from%20interlayer%20excitons%20in%20a%202D%20semiconductor%20heterobilayer&rft.jtitle=Nanotechnology&rft.au=Borghi,%20Matteo%20T%20A&rft.date=2024-08-29&rft.volume=35&rft.issue=46&rft.spage=465203&rft.pages=465203-&rft.issn=0957-4484&rft.eissn=1361-6528&rft.coden=NNOTER&rft_id=info:doi/10.1088/1361-6528/ad70b3&rft_dat=%3Cproquest_cross%3E3094472583%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=3094472583&rft_id=info:pmid/39158548&rfr_iscdi=true |