Oxygen vacancy dynamics in Pt/TiO x /TaO y /Pt memristors: exchange with the environment and internal electromigration

Oxygen vacancy dynamics in Pt/TiO x /TaO y /Pt memristors: exchange with the environment and internal electromigration

Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually linked to the electromigration at the nanoscale of charged oxygen vacancies (OV). In this paper we address, for Pt/TiO /TaO...

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Veröffentlicht in:Nanotechnology 2023-02, Vol.34 (9), p.95202
Hauptverfasser: Leal Martir, Rodrigo, José Sánchez, María, Aguirre, Myriam, Quiñonez, Walter, Ferreyra, Cristian, Acha, Carlos, Lecourt, Jerome, Lüders, Ulrike, Rubi, Diego
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container_issue 9
container_start_page 95202
container_title Nanotechnology
container_volume 34
creator Leal Martir, Rodrigo
José Sánchez, María
Aguirre, Myriam
Quiñonez, Walter
Ferreyra, Cristian
Acha, Carlos
Lecourt, Jerome
Lüders, Ulrike
Rubi, Diego
description Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually linked to the electromigration at the nanoscale of charged oxygen vacancies (OV). In this paper we address, for Pt/TiO /TaO /Pt devices, the exchange of OV between the device and the environment upon the application of electrical stress. From a combination of experiments and theoretical simulations we determine that both TiO and TaO layers oxidize, via environmental oxygen uptake, during the electroforming process. Once the memristive effect is stabilized (post-forming behavior) our results suggest that oxygen exchange with the environment is suppressed and the OV dynamics that drives the memristive behavior is restricted to an internal electromigration between TiO and TaO layers. Our work provides relevant information for the design of reliable binary oxide memristive devices.
doi_str_mv 10.1088/1361-6528/aca597
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title Oxygen vacancy dynamics in Pt/TiO x /TaO y /Pt memristors: exchange with the environment and internal electromigration
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