Hexagonal silicon−germanium nanowire branches with tunable composition

Hexagonal SiGe-2H has been recently shown to have a direct bandgap, and holds the promise to be compatible with silicon technology. Hexagonal Si and Ge have been grown on an epitaxial lattice matched template consisting of wurtzite GaP and GaAs, respectively. Here, we present the growth of hexagonal...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Nanotechnology 2023-01, Vol.34 (1), p.15601
Hauptverfasser:	Li, A, Hauge, H I T, Verheijen, M A, Bakkers, E P A M, Tucker, R T, Vincent, L, Renard, C
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter crystal growth hexagonal Materials Science nanowire Physics SiGe
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!