Phonon assisted electron emission from quasi-freestanding bilayer epitaxial graphene microstructures

Electron emission from quasi-freestanding bilayer epitaxial graphene (QEG) on a silicon carbide substrate is reported, demonstrating emission currents as high as 8.5 µA, at ~200 °C, under 0.3 Torr vacuum. Given the significantly low turn-on temperature of these QEG devices, ~150°C, the electron emis...

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Veröffentlicht in:	Nanotechnology 2022-09, Vol.33 (37), p.375202
Hauptverfasser:	Lewis, Daniel, Jordan, Brendan, Pedowitz, Michael, Pennachio, Daniel J, Hajzus, Jenifer R, Myers-Ward, Rachael, Daniels, Kevin M
Format:	Artikel
Sprache:	eng
Schlagworte:	bilayer graphene electron emission epitaxial graphene microstructures phonon assisted quasi-freestanding
Online-Zugang:	Volltext
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