Phonon assisted electron emission from quasi-freestanding bilayer epitaxial graphene microstructures
Electron emission from quasi-freestanding bilayer epitaxial graphene (QEG) on a silicon carbide substrate is reported, demonstrating emission currents as high as 8.5 µA, at ~200 °C, under 0.3 Torr vacuum. Given the significantly low turn-on temperature of these QEG devices, ~150°C, the electron emis...
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| Veröffentlicht in: | Nanotechnology 2022-09, Vol.33 (37), p.375202 |
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| container_issue | 37 |
| container_start_page | 375202 |
| container_title | Nanotechnology |
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| creator | Lewis, Daniel Jordan, Brendan Pedowitz, Michael Pennachio, Daniel J Hajzus, Jenifer R Myers-Ward, Rachael Daniels, Kevin M |
| description | Electron emission from quasi-freestanding bilayer epitaxial graphene (QEG) on a silicon carbide substrate is reported, demonstrating emission currents as high as 8.5 µA, at ~200 °C, under 0.3 Torr vacuum. Given the significantly low turn-on temperature of these QEG devices, ~150°C, the electron emission is explained by phonon-assisted electron emission, where the acoustic and optical phonons of QEG causes carrier acceleration and emission. Devices of differing dimensions and shapes are fabricated via a simple and scalable fabrication procedure and tested. Variations in device morphology increase the density of dangling bonds, which can act as electron emission sites. Devices exhibit emission enhancement at increased temperatures, attributed to greater phonon densities. Devices exhibit emission under various test conditions, and a superior design and operating methodology are identified. |
| doi_str_mv | 10.1088/1361-6528/ac7653 |
| format | Article |
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Given the significantly low turn-on temperature of these QEG devices, ~150°C, the electron emission is explained by phonon-assisted electron emission, where the acoustic and optical phonons of QEG causes carrier acceleration and emission. Devices of differing dimensions and shapes are fabricated via a simple and scalable fabrication procedure and tested. Variations in device morphology increase the density of dangling bonds, which can act as electron emission sites. Devices exhibit emission enhancement at increased temperatures, attributed to greater phonon densities. Devices exhibit emission under various test conditions, and a superior design and operating methodology are identified.</description><identifier>ISSN: 0957-4484</identifier><identifier>EISSN: 1361-6528</identifier><identifier>DOI: 10.1088/1361-6528/ac7653</identifier><identifier>PMID: 35671745</identifier><identifier>CODEN: NNOTER</identifier><language>eng</language><publisher>England: IOP Publishing</publisher><subject>bilayer graphene ; electron emission ; epitaxial graphene ; microstructures ; phonon assisted ; quasi-freestanding</subject><ispartof>Nanotechnology, 2022-09, Vol.33 (37), p.375202</ispartof><rights>2022 IOP Publishing Ltd</rights><rights>2022 IOP Publishing Ltd.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-1245a7f6ef7ab575f05352072cb3b8f22999e5ed7082a6e604348e2fb66efa513</citedby><cites>FETCH-LOGICAL-c285t-1245a7f6ef7ab575f05352072cb3b8f22999e5ed7082a6e604348e2fb66efa513</cites><orcidid>0000-0002-8379-6731 ; 0000-0002-2227-4868 ; 0000-0002-0797-5076</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1361-6528/ac7653/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27923,27924,53845,53892</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/35671745$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Lewis, Daniel</creatorcontrib><creatorcontrib>Jordan, Brendan</creatorcontrib><creatorcontrib>Pedowitz, Michael</creatorcontrib><creatorcontrib>Pennachio, Daniel J</creatorcontrib><creatorcontrib>Hajzus, Jenifer R</creatorcontrib><creatorcontrib>Myers-Ward, Rachael</creatorcontrib><creatorcontrib>Daniels, Kevin M</creatorcontrib><title>Phonon assisted electron emission from quasi-freestanding bilayer epitaxial graphene microstructures</title><title>Nanotechnology</title><addtitle>NANO</addtitle><addtitle>Nanotechnology</addtitle><description>Electron emission from quasi-freestanding bilayer epitaxial graphene (QEG) on a silicon carbide substrate is reported, demonstrating emission currents as high as 8.5 µA, at ~200 °C, under 0.3 Torr vacuum. Given the significantly low turn-on temperature of these QEG devices, ~150°C, the electron emission is explained by phonon-assisted electron emission, where the acoustic and optical phonons of QEG causes carrier acceleration and emission. Devices of differing dimensions and shapes are fabricated via a simple and scalable fabrication procedure and tested. Variations in device morphology increase the density of dangling bonds, which can act as electron emission sites. Devices exhibit emission enhancement at increased temperatures, attributed to greater phonon densities. Devices exhibit emission under various test conditions, and a superior design and operating methodology are identified.</description><subject>bilayer graphene</subject><subject>electron emission</subject><subject>epitaxial graphene</subject><subject>microstructures</subject><subject>phonon assisted</subject><subject>quasi-freestanding</subject><issn>0957-4484</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9UMtKxTAUDKLo9bF3JV0qWG8ezeMuRXyBoAtdh7Q90Uib1KQF_XtT7tWVCAfOYZgZzgxCxwRfEKzUkjBBSsGpWppGCs620OIX2kYLvOKyrCpV7aH9lN4xJkRRsov2GBeSyIovUPv0FnzwhUnJpRHaAjpoxpgR6F3G8mFj6IuPySRX2giQRuNb51-L2nXmC2IBgxvNpzNd8RrN8AYeit41MaQxTs04RUiHaMeaLsHRZh-gl5vr56u78uHx9v7q8qFsqOJjSWjFjbQCrDQ1l9xizjjFkjY1q5WldLVaAYdWYkWNAIErVimgthZZYjhhB-h07TvE8DHlT3XO0EDXGQ9hSpoKOUuoYJmK19T50RTB6iG63sQvTbCeu9VzkXouUq-7zZKTjftU99D-Cn7KzITzNcGFQb-HKfoc9j-_sz_o3vigGdNM5snpqR5ay74BEUqSOw</recordid><startdate>20220910</startdate><enddate>20220910</enddate><creator>Lewis, Daniel</creator><creator>Jordan, Brendan</creator><creator>Pedowitz, Michael</creator><creator>Pennachio, Daniel J</creator><creator>Hajzus, Jenifer R</creator><creator>Myers-Ward, Rachael</creator><creator>Daniels, Kevin M</creator><general>IOP Publishing</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-8379-6731</orcidid><orcidid>https://orcid.org/0000-0002-2227-4868</orcidid><orcidid>https://orcid.org/0000-0002-0797-5076</orcidid></search><sort><creationdate>20220910</creationdate><title>Phonon assisted electron emission from quasi-freestanding bilayer epitaxial graphene microstructures</title><author>Lewis, Daniel ; Jordan, Brendan ; Pedowitz, Michael ; Pennachio, Daniel J ; Hajzus, Jenifer R ; Myers-Ward, Rachael ; Daniels, Kevin M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-1245a7f6ef7ab575f05352072cb3b8f22999e5ed7082a6e604348e2fb66efa513</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>bilayer graphene</topic><topic>electron emission</topic><topic>epitaxial graphene</topic><topic>microstructures</topic><topic>phonon assisted</topic><topic>quasi-freestanding</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lewis, Daniel</creatorcontrib><creatorcontrib>Jordan, Brendan</creatorcontrib><creatorcontrib>Pedowitz, Michael</creatorcontrib><creatorcontrib>Pennachio, Daniel J</creatorcontrib><creatorcontrib>Hajzus, Jenifer R</creatorcontrib><creatorcontrib>Myers-Ward, Rachael</creatorcontrib><creatorcontrib>Daniels, Kevin M</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lewis, Daniel</au><au>Jordan, Brendan</au><au>Pedowitz, Michael</au><au>Pennachio, Daniel J</au><au>Hajzus, Jenifer R</au><au>Myers-Ward, Rachael</au><au>Daniels, Kevin M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Phonon assisted electron emission from quasi-freestanding bilayer epitaxial graphene microstructures</atitle><jtitle>Nanotechnology</jtitle><stitle>NANO</stitle><addtitle>Nanotechnology</addtitle><date>2022-09-10</date><risdate>2022</risdate><volume>33</volume><issue>37</issue><spage>375202</spage><pages>375202-</pages><issn>0957-4484</issn><eissn>1361-6528</eissn><coden>NNOTER</coden><abstract>Electron emission from quasi-freestanding bilayer epitaxial graphene (QEG) on a silicon carbide substrate is reported, demonstrating emission currents as high as 8.5 µA, at ~200 °C, under 0.3 Torr vacuum. Given the significantly low turn-on temperature of these QEG devices, ~150°C, the electron emission is explained by phonon-assisted electron emission, where the acoustic and optical phonons of QEG causes carrier acceleration and emission. Devices of differing dimensions and shapes are fabricated via a simple and scalable fabrication procedure and tested. Variations in device morphology increase the density of dangling bonds, which can act as electron emission sites. Devices exhibit emission enhancement at increased temperatures, attributed to greater phonon densities. Devices exhibit emission under various test conditions, and a superior design and operating methodology are identified.</abstract><cop>England</cop><pub>IOP Publishing</pub><pmid>35671745</pmid><doi>10.1088/1361-6528/ac7653</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0002-8379-6731</orcidid><orcidid>https://orcid.org/0000-0002-2227-4868</orcidid><orcidid>https://orcid.org/0000-0002-0797-5076</orcidid></addata></record> |
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| ispartof | Nanotechnology, 2022-09, Vol.33 (37), p.375202 |
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| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | bilayer graphene electron emission epitaxial graphene microstructures phonon assisted quasi-freestanding |
| title | Phonon assisted electron emission from quasi-freestanding bilayer epitaxial graphene microstructures |
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