Ultralow dark current infrared photodetector based on SnTe quantum dots beyond 2 μm at room temperature

Quantum dots (QDs) are promising materials used for room temperature mid-infrared (MIR) photodetector due to their solution processing, compatibility with silicon and tunability of band structure. Up to now, HgTe QDs is the most widely studied material for MIR detection. However, photodetectors asse...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Nanotechnology 2021-05, Vol.32 (19), p.195602
Hauptverfasser:	Feng, Yajun, Chang, Huicong, Liu, Yingbo, Guo, Nan, Liu, Junku, Xiao, Lin, Li, Lishuo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!