Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications

GeSn alloys have emerged as promising materials for silicon-based optoelectronic devices. However, the epitaxy of pseudomorphic GeSn layers on a Ge buffer is susceptible to a significant compressive strain that significantly hinders the performance of GeSn-based photonic devices. Herein, we report o...

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Veröffentlicht in:	Nanotechnology 2020-10, Vol.31 (44), p.445301-445301
Hauptverfasser:	Tai, Yeh-Chen, Yeh, Po-Lun, An, Shu, Cheng, Hung-Hsiang, Kim, Munho, Chang, Guo-En
Format:	Artikel
Sprache:	eng
Schlagworte:	GeSn alloys silicon photonics strain engineering transfer-printing
Online-Zugang:	Volltext
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