Bipolar resistive switching of Pt/Ga 2 O 3-x /SiC/Pt thin film with ultrahigh OFF/ON resistance ratios

Bipolar resistive switching of Pt/Ga 2 O 3-x /SiC/Pt thin film with ultrahigh OFF/ON resistance ratios

A multiple-layer thin film of Pt/Ga O /SiC/Pt-based resistive switching is systematically investigated. Excellent bipolar resistive switching behavior is observed with a high resistance switching ratio of OFF/ON up to 10 . The current-voltage relations plot implies the Ohmic conductance of the ON st...

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Veröffentlicht in:Nanotechnology 2020-05, Vol.31 (22), p.225206
Hauptverfasser: Shen, Xia, Zhang, Longlong, Liu, Lijuan, An, Yuehua, Gao, Zhensen, Guo, Pengfei
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container_issue 22
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container_title Nanotechnology
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creator Shen, Xia
Zhang, Longlong
Liu, Lijuan
An, Yuehua
Gao, Zhensen
Guo, Pengfei
description A multiple-layer thin film of Pt/Ga O /SiC/Pt-based resistive switching is systematically investigated. Excellent bipolar resistive switching behavior is observed with a high resistance switching ratio of OFF/ON up to 10 . The current-voltage relations plot implies the Ohmic conductance of the ON state, while the space and interface charge limited the current of the OFF state. The micro mechanism of resistive switching is explained by the formation/rupture of conductive filaments formed out of oxygen vacancies within the Ga O and SiC region. In particular, these devices exhibit excellent stability. The high OFF/ON resistance ratio can be completely retained for a number of days without degradation.
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title Bipolar resistive switching of Pt/Ga 2 O 3-x /SiC/Pt thin film with ultrahigh OFF/ON resistance ratios
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