Resistive switching and synaptic learning performance of a TiO 2 thin film based device prepared by sol-gel and spin coating techniques
A resistance random access memory device based on TiO thin films was fabricated using a sol-gel spin and coating techniques. The composition, surface morphology, and microstructure of the TiO films were characterized using x-ray diffraction, Raman spectroscopy, scanning electronic microscopy, and tr...
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| Veröffentlicht in: | Nanotechnology 2020-04, Vol.31 (15), p.155202 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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