Comprehensive study of high pressure annealing on the ferroelectric properties of Hf 0.5 Zr 0.5 O 2 thin films

Comprehensive study of high pressure annealing on the ferroelectric properties of Hf 0.5 Zr 0.5 O 2 thin films

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Veröffentlicht in:Nanotechnology 2019-12, Vol.30 (50), p.505204
Hauptverfasser: Oh, Changyong, Tewari, Amit, Kim, Kyungkwan, Kumar, Ulayil Sajesh, Shin, Changhwan, Ahn, Minho, Jeon, Sanghun
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container_end_page
container_issue 50
container_start_page 505204
container_title Nanotechnology
container_volume 30
creator Oh, Changyong
Tewari, Amit
Kim, Kyungkwan
Kumar, Ulayil Sajesh
Shin, Changhwan
Ahn, Minho
Jeon, Sanghun
description
doi_str_mv 10.1088/1361-6528/ab3c8f
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1088_1361_6528_ab3c8f</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1088_1361_6528_ab3c8f</sourcerecordid><originalsourceid>FETCH-LOGICAL-c88f-effc6fa8f24fa49c58df78f46fcceeea3b5e70e618c5b96f3812eaa25ae01db83</originalsourceid><addsrcrecordid>eNo9kE9PgzAYxhujiTi9e-wXYGuBwsvREHUmS3bZyQsp5X1HDRTSMpN9e4cznp7k-Xf4MfYsxVoKgI1McxnnKoGNblIDdMOif-uWRaJURZxlkN2zhxC-hJASEhkxV43D5LFDF-w38jCf2jMfiXf22PFLEMLJI9fOoe6tO_LR8blDTuj9iD2a2Vtz6Y0T-tliWKZb4mKt-Kf_lT1PLgvrONl-CI_sjnQf8OlPV-zw9nqotvFu__5RvexiA0AxEpmcNFCSkc5Ko6ClAijLyRhE1GmjsBCYSzCqKXNKQSaodaI0Ctk2kK6YuN4aP4bgkerJ20H7cy1FveCqFzb1wqa-4kp_ACQjYDs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Comprehensive study of high pressure annealing on the ferroelectric properties of Hf 0.5 Zr 0.5 O 2 thin films</title><source>Institute of Physics Journals</source><creator>Oh, Changyong ; Tewari, Amit ; Kim, Kyungkwan ; Kumar, Ulayil Sajesh ; Shin, Changhwan ; Ahn, Minho ; Jeon, Sanghun</creator><creatorcontrib>Oh, Changyong ; Tewari, Amit ; Kim, Kyungkwan ; Kumar, Ulayil Sajesh ; Shin, Changhwan ; Ahn, Minho ; Jeon, Sanghun</creatorcontrib><identifier>ISSN: 0957-4484</identifier><identifier>EISSN: 1361-6528</identifier><identifier>DOI: 10.1088/1361-6528/ab3c8f</identifier><language>eng</language><ispartof>Nanotechnology, 2019-12, Vol.30 (50), p.505204</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c88f-effc6fa8f24fa49c58df78f46fcceeea3b5e70e618c5b96f3812eaa25ae01db83</citedby><cites>FETCH-LOGICAL-c88f-effc6fa8f24fa49c58df78f46fcceeea3b5e70e618c5b96f3812eaa25ae01db83</cites><orcidid>0000-0002-0414-9625 ; 0000-0001-6057-3773</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Oh, Changyong</creatorcontrib><creatorcontrib>Tewari, Amit</creatorcontrib><creatorcontrib>Kim, Kyungkwan</creatorcontrib><creatorcontrib>Kumar, Ulayil Sajesh</creatorcontrib><creatorcontrib>Shin, Changhwan</creatorcontrib><creatorcontrib>Ahn, Minho</creatorcontrib><creatorcontrib>Jeon, Sanghun</creatorcontrib><title>Comprehensive study of high pressure annealing on the ferroelectric properties of Hf 0.5 Zr 0.5 O 2 thin films</title><title>Nanotechnology</title><issn>0957-4484</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNo9kE9PgzAYxhujiTi9e-wXYGuBwsvREHUmS3bZyQsp5X1HDRTSMpN9e4cznp7k-Xf4MfYsxVoKgI1McxnnKoGNblIDdMOif-uWRaJURZxlkN2zhxC-hJASEhkxV43D5LFDF-w38jCf2jMfiXf22PFLEMLJI9fOoe6tO_LR8blDTuj9iD2a2Vtz6Y0T-tliWKZb4mKt-Kf_lT1PLgvrONl-CI_sjnQf8OlPV-zw9nqotvFu__5RvexiA0AxEpmcNFCSkc5Ko6ClAijLyRhE1GmjsBCYSzCqKXNKQSaodaI0Ctk2kK6YuN4aP4bgkerJ20H7cy1FveCqFzb1wqa-4kp_ACQjYDs</recordid><startdate>20191213</startdate><enddate>20191213</enddate><creator>Oh, Changyong</creator><creator>Tewari, Amit</creator><creator>Kim, Kyungkwan</creator><creator>Kumar, Ulayil Sajesh</creator><creator>Shin, Changhwan</creator><creator>Ahn, Minho</creator><creator>Jeon, Sanghun</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-0414-9625</orcidid><orcidid>https://orcid.org/0000-0001-6057-3773</orcidid></search><sort><creationdate>20191213</creationdate><title>Comprehensive study of high pressure annealing on the ferroelectric properties of Hf 0.5 Zr 0.5 O 2 thin films</title><author>Oh, Changyong ; Tewari, Amit ; Kim, Kyungkwan ; Kumar, Ulayil Sajesh ; Shin, Changhwan ; Ahn, Minho ; Jeon, Sanghun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c88f-effc6fa8f24fa49c58df78f46fcceeea3b5e70e618c5b96f3812eaa25ae01db83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Oh, Changyong</creatorcontrib><creatorcontrib>Tewari, Amit</creatorcontrib><creatorcontrib>Kim, Kyungkwan</creatorcontrib><creatorcontrib>Kumar, Ulayil Sajesh</creatorcontrib><creatorcontrib>Shin, Changhwan</creatorcontrib><creatorcontrib>Ahn, Minho</creatorcontrib><creatorcontrib>Jeon, Sanghun</creatorcontrib><collection>CrossRef</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Oh, Changyong</au><au>Tewari, Amit</au><au>Kim, Kyungkwan</au><au>Kumar, Ulayil Sajesh</au><au>Shin, Changhwan</au><au>Ahn, Minho</au><au>Jeon, Sanghun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comprehensive study of high pressure annealing on the ferroelectric properties of Hf 0.5 Zr 0.5 O 2 thin films</atitle><jtitle>Nanotechnology</jtitle><date>2019-12-13</date><risdate>2019</risdate><volume>30</volume><issue>50</issue><spage>505204</spage><pages>505204-</pages><issn>0957-4484</issn><eissn>1361-6528</eissn><doi>10.1088/1361-6528/ab3c8f</doi><orcidid>https://orcid.org/0000-0002-0414-9625</orcidid><orcidid>https://orcid.org/0000-0001-6057-3773</orcidid></addata></record>
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title Comprehensive study of high pressure annealing on the ferroelectric properties of Hf 0.5 Zr 0.5 O 2 thin films
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T04%3A12%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Comprehensive%20study%20of%20high%20pressure%20annealing%20on%20the%20ferroelectric%20properties%20of%20Hf%200.5%20Zr%200.5%20O%202%20thin%20films&rft.jtitle=Nanotechnology&rft.au=Oh,%20Changyong&rft.date=2019-12-13&rft.volume=30&rft.issue=50&rft.spage=505204&rft.pages=505204-&rft.issn=0957-4484&rft.eissn=1361-6528&rft_id=info:doi/10.1088/1361-6528/ab3c8f&rft_dat=%3Ccrossref%3E10_1088_1361_6528_ab3c8f%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true