Control of tunnel barriers in multi-wall carbon nanotubes using focused ion beam irradiation

Control of tunnel barriers in multi-wall carbon nanotubes using focused ion beam irradiation

We have formed tunnel barriers in individual multi-wall carbon nanotubes using the Ga focused ion beam irradiation. The barrier height was estimated by the temperature dependence of the current (Arrhenius plot) and the current-voltage curves (Fowler-Nordheim plot). It is shown that the barrier heigh...

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Veröffentlicht in:Nanotechnology 2017-04, Vol.28 (16), p.165302-165302
Hauptverfasser: Tomizawa, H, Suzuki, K, Yamaguchi, T, Akita, S, Ishibashi, K
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focused ion beam
multi-wall carbon nanotubes
quantum dots
tunnel barriers
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container_end_page 165302
container_issue 16
container_start_page 165302
container_title Nanotechnology
container_volume 28
creator Tomizawa, H
Suzuki, K
Yamaguchi, T
Akita, S
Ishibashi, K
description We have formed tunnel barriers in individual multi-wall carbon nanotubes using the Ga focused ion beam irradiation. The barrier height was estimated by the temperature dependence of the current (Arrhenius plot) and the current-voltage curves (Fowler-Nordheim plot). It is shown that the barrier height has a strong correlation with the barrier resistance that is controlled by the dose. Possible origins for the variation in observed barrier characteristics are discussed. Finally, the single electron transistor with two barriers is demonstrated.
doi_str_mv 10.1088/1361-6528/aa6568
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subjects focused ion beam
multi-wall carbon nanotubes
quantum dots
tunnel barriers
title Control of tunnel barriers in multi-wall carbon nanotubes using focused ion beam irradiation
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