High quality epitaxial graphene by hydrogen-etching of 3C-SiC(111) thin-film on Si(111)

Etching with atomic hydrogen, as a preparation step before the high-temperature growth process of graphene onto a thin 3C-SiC film grown on Si(111), greatly improves the structural quality of topmost graphene layers. Pit formation and island coalescence, which are typical of graphene growth by SiC g...

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Veröffentlicht in:	Nanotechnology 2017-03, Vol.28 (11), p.115601-115601
Hauptverfasser:	Mondelli, Pierluigi, Gupta, Bharati, Betti, Maria Grazia, Mariani, Carlo, Duffin, Josh Lipton, Motta, Nunzio
Format:	Artikel
Sprache:	eng
Schlagworte:	epitaxial growth graphene Raman SiC STM thin film XPS
Online-Zugang:	Volltext
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