Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials

An important issue in the technology of cubic SiC (3C-SiC) material for electronic device applications is to understand the behavior of extended defects such as partial dislocation complexes and stacking faults (SFs). Atomistic simulations using molecular dynamics (MD) are an efficient tool to tackl...

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Veröffentlicht in:	Modelling and simulation in materials science and engineering 2020-01, Vol.28 (1), p.15002
Hauptverfasser:	Sarikov, Andrey, Marzegalli, Anna, Barbisan, Luca, Scalise, Emilio, Montalenti, Francesco, Miglio, Leo
Format:	Artikel
Sprache:	eng
Schlagworte:	3C-SiC dislocations extended defects LAMMPS code molecular dynamics simulations stacking faults
Online-Zugang:	Volltext
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