Fermi-level tuning of the Dirac surface state in (Bi 1-x Sb x ) 2 Se 3 thin films
We report on the electronic states and the transport properties of three-dimensional topological insulator (Bi Sb ) Se ternary alloy thin films grown on an isostructural Bi Se buffer layer on InP substrates. By angle-resolved photoemission spectroscopy, we clearly detected Dirac surface states with...
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| Veröffentlicht in: | Journal of physics. Condensed matter 2018-02, Vol.30 (8), p.085501 |
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| container_start_page | 085501 |
| container_title | Journal of physics. Condensed matter |
| container_volume | 30 |
| creator | Satake, Yosuke Shiogai, Junichi Takane, Daichi Yamada, Keiko Fujiwara, Kohei Souma, Seigo Sato, Takafumi Takahashi, Takashi Tsukazaki, Atsushi |
| description | We report on the electronic states and the transport properties of three-dimensional topological insulator (Bi
Sb
)
Se
ternary alloy thin films grown on an isostructural Bi
Se
buffer layer on InP substrates. By angle-resolved photoemission spectroscopy, we clearly detected Dirac surface states with a large bulk band gap of 0.2-0.3 eV in the (Bi
Sb
)
Se
film with x = 0.70. In addition, we observed by Hall effect measurements that the dominant charge carrier converts from electron (n-type) to hole (p-type) at around x = 0.7, indicating that the Fermi level can be controlled across the Dirac point. Indeed, the carrier transport was shown to be governed by Dirac surface state in 0.63 ⩽ x ⩽ 0.75. These features suggest that Fermi-level tunable (Bi
Sb
)
Se
-based heterostructures provide a platform for extracting exotic topological phenomena. |
| doi_str_mv | 10.1088/1361-648X/aaa724 |
| format | Article |
| fullrecord | <record><control><sourceid>pubmed_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1088_1361_648X_aaa724</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29388559</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1119-133112fbaf6c40a1f6f33826c9ccd672f589a4df9a510995d065d02b64f34f8c3</originalsourceid><addsrcrecordid>eNo9kEFLAzEQhYMotlbvnmSOelibSbJpctRqVSiIVMHbks0mGtltS7Ir9d-7pdrD8GAe3zt8hJwjvUaq1Bi5xEwK9T42xkyYOCDD_euQDKnOeaa0EgNyktIXpVQoLo7JgGmuVJ7rIXmZudiErHbfroa2W4blB6w8tJ8O7kI0FlIXvbEOUmtaB2EJl7cBMNvAooQNXAGDhQPeA33lQ92kU3LkTZ3c2V-OyNvs_nX6mM2fH56mN_PMIqLOkHNE5kvjpRXUoJeec8Wk1dZWcsJ8rrQRldcmR6p1XlHZHyul8Fx4ZfmI0N2ujauUovPFOobGxJ8CabG1U2xVFFsVxc5Oj1zskHVXNq7aA_86-C_4k12A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Fermi-level tuning of the Dirac surface state in (Bi 1-x Sb x ) 2 Se 3 thin films</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Satake, Yosuke ; Shiogai, Junichi ; Takane, Daichi ; Yamada, Keiko ; Fujiwara, Kohei ; Souma, Seigo ; Sato, Takafumi ; Takahashi, Takashi ; Tsukazaki, Atsushi</creator><creatorcontrib>Satake, Yosuke ; Shiogai, Junichi ; Takane, Daichi ; Yamada, Keiko ; Fujiwara, Kohei ; Souma, Seigo ; Sato, Takafumi ; Takahashi, Takashi ; Tsukazaki, Atsushi</creatorcontrib><description>We report on the electronic states and the transport properties of three-dimensional topological insulator (Bi
Sb
)
Se
ternary alloy thin films grown on an isostructural Bi
Se
buffer layer on InP substrates. By angle-resolved photoemission spectroscopy, we clearly detected Dirac surface states with a large bulk band gap of 0.2-0.3 eV in the (Bi
Sb
)
Se
film with x = 0.70. In addition, we observed by Hall effect measurements that the dominant charge carrier converts from electron (n-type) to hole (p-type) at around x = 0.7, indicating that the Fermi level can be controlled across the Dirac point. Indeed, the carrier transport was shown to be governed by Dirac surface state in 0.63 ⩽ x ⩽ 0.75. These features suggest that Fermi-level tunable (Bi
Sb
)
Se
-based heterostructures provide a platform for extracting exotic topological phenomena.</description><identifier>ISSN: 0953-8984</identifier><identifier>EISSN: 1361-648X</identifier><identifier>DOI: 10.1088/1361-648X/aaa724</identifier><identifier>PMID: 29388559</identifier><language>eng</language><publisher>England</publisher><ispartof>Journal of physics. Condensed matter, 2018-02, Vol.30 (8), p.085501</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1119-133112fbaf6c40a1f6f33826c9ccd672f589a4df9a510995d065d02b64f34f8c3</citedby><cites>FETCH-LOGICAL-c1119-133112fbaf6c40a1f6f33826c9ccd672f589a4df9a510995d065d02b64f34f8c3</cites><orcidid>0000-0002-6093-074X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/29388559$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Satake, Yosuke</creatorcontrib><creatorcontrib>Shiogai, Junichi</creatorcontrib><creatorcontrib>Takane, Daichi</creatorcontrib><creatorcontrib>Yamada, Keiko</creatorcontrib><creatorcontrib>Fujiwara, Kohei</creatorcontrib><creatorcontrib>Souma, Seigo</creatorcontrib><creatorcontrib>Sato, Takafumi</creatorcontrib><creatorcontrib>Takahashi, Takashi</creatorcontrib><creatorcontrib>Tsukazaki, Atsushi</creatorcontrib><title>Fermi-level tuning of the Dirac surface state in (Bi 1-x Sb x ) 2 Se 3 thin films</title><title>Journal of physics. Condensed matter</title><addtitle>J Phys Condens Matter</addtitle><description>We report on the electronic states and the transport properties of three-dimensional topological insulator (Bi
Sb
)
Se
ternary alloy thin films grown on an isostructural Bi
Se
buffer layer on InP substrates. By angle-resolved photoemission spectroscopy, we clearly detected Dirac surface states with a large bulk band gap of 0.2-0.3 eV in the (Bi
Sb
)
Se
film with x = 0.70. In addition, we observed by Hall effect measurements that the dominant charge carrier converts from electron (n-type) to hole (p-type) at around x = 0.7, indicating that the Fermi level can be controlled across the Dirac point. Indeed, the carrier transport was shown to be governed by Dirac surface state in 0.63 ⩽ x ⩽ 0.75. These features suggest that Fermi-level tunable (Bi
Sb
)
Se
-based heterostructures provide a platform for extracting exotic topological phenomena.</description><issn>0953-8984</issn><issn>1361-648X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNo9kEFLAzEQhYMotlbvnmSOelibSbJpctRqVSiIVMHbks0mGtltS7Ir9d-7pdrD8GAe3zt8hJwjvUaq1Bi5xEwK9T42xkyYOCDD_euQDKnOeaa0EgNyktIXpVQoLo7JgGmuVJ7rIXmZudiErHbfroa2W4blB6w8tJ8O7kI0FlIXvbEOUmtaB2EJl7cBMNvAooQNXAGDhQPeA33lQ92kU3LkTZ3c2V-OyNvs_nX6mM2fH56mN_PMIqLOkHNE5kvjpRXUoJeec8Wk1dZWcsJ8rrQRldcmR6p1XlHZHyul8Fx4ZfmI0N2ujauUovPFOobGxJ8CabG1U2xVFFsVxc5Oj1zskHVXNq7aA_86-C_4k12A</recordid><startdate>20180228</startdate><enddate>20180228</enddate><creator>Satake, Yosuke</creator><creator>Shiogai, Junichi</creator><creator>Takane, Daichi</creator><creator>Yamada, Keiko</creator><creator>Fujiwara, Kohei</creator><creator>Souma, Seigo</creator><creator>Sato, Takafumi</creator><creator>Takahashi, Takashi</creator><creator>Tsukazaki, Atsushi</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-6093-074X</orcidid></search><sort><creationdate>20180228</creationdate><title>Fermi-level tuning of the Dirac surface state in (Bi 1-x Sb x ) 2 Se 3 thin films</title><author>Satake, Yosuke ; Shiogai, Junichi ; Takane, Daichi ; Yamada, Keiko ; Fujiwara, Kohei ; Souma, Seigo ; Sato, Takafumi ; Takahashi, Takashi ; Tsukazaki, Atsushi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1119-133112fbaf6c40a1f6f33826c9ccd672f589a4df9a510995d065d02b64f34f8c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Satake, Yosuke</creatorcontrib><creatorcontrib>Shiogai, Junichi</creatorcontrib><creatorcontrib>Takane, Daichi</creatorcontrib><creatorcontrib>Yamada, Keiko</creatorcontrib><creatorcontrib>Fujiwara, Kohei</creatorcontrib><creatorcontrib>Souma, Seigo</creatorcontrib><creatorcontrib>Sato, Takafumi</creatorcontrib><creatorcontrib>Takahashi, Takashi</creatorcontrib><creatorcontrib>Tsukazaki, Atsushi</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><jtitle>Journal of physics. Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Satake, Yosuke</au><au>Shiogai, Junichi</au><au>Takane, Daichi</au><au>Yamada, Keiko</au><au>Fujiwara, Kohei</au><au>Souma, Seigo</au><au>Sato, Takafumi</au><au>Takahashi, Takashi</au><au>Tsukazaki, Atsushi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fermi-level tuning of the Dirac surface state in (Bi 1-x Sb x ) 2 Se 3 thin films</atitle><jtitle>Journal of physics. Condensed matter</jtitle><addtitle>J Phys Condens Matter</addtitle><date>2018-02-28</date><risdate>2018</risdate><volume>30</volume><issue>8</issue><spage>085501</spage><pages>085501-</pages><issn>0953-8984</issn><eissn>1361-648X</eissn><abstract>We report on the electronic states and the transport properties of three-dimensional topological insulator (Bi
Sb
)
Se
ternary alloy thin films grown on an isostructural Bi
Se
buffer layer on InP substrates. By angle-resolved photoemission spectroscopy, we clearly detected Dirac surface states with a large bulk band gap of 0.2-0.3 eV in the (Bi
Sb
)
Se
film with x = 0.70. In addition, we observed by Hall effect measurements that the dominant charge carrier converts from electron (n-type) to hole (p-type) at around x = 0.7, indicating that the Fermi level can be controlled across the Dirac point. Indeed, the carrier transport was shown to be governed by Dirac surface state in 0.63 ⩽ x ⩽ 0.75. These features suggest that Fermi-level tunable (Bi
Sb
)
Se
-based heterostructures provide a platform for extracting exotic topological phenomena.</abstract><cop>England</cop><pmid>29388559</pmid><doi>10.1088/1361-648X/aaa724</doi><orcidid>https://orcid.org/0000-0002-6093-074X</orcidid></addata></record> |
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| ispartof | Journal of physics. Condensed matter, 2018-02, Vol.30 (8), p.085501 |
| issn | 0953-8984 1361-648X |
| language | eng |
| recordid | cdi_crossref_primary_10_1088_1361_648X_aaa724 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Fermi-level tuning of the Dirac surface state in (Bi 1-x Sb x ) 2 Se 3 thin films |
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