Electronic properties and morphology of copper oxide/n-type silicon heterostructures

Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 4...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of physics. Condensed matter 2017-08, Vol.29 (31), p.315701-315701
Hauptverfasser:	Lindberg, P F, Gorantla, S M, Gunnæs, A E, Svensson, B G, Monakhov, E V
Format:	Artikel
Sprache:	eng
Schlagworte:	copper oxide electronic properties interface silicon structure
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!