Enhancing n-type doping in diamond by strain engineering

The utilization of diamond, the ultimate semiconductor, in electronic devices is challenging due to the difficulty of n-type doping. Phosphorus (P)-doped diamond, the most prevalent type of n-type diamond, is still limited by the low solubility of P dopant and undesirable compensating defects such a...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2024-12, Vol.57 (48), p.485103
Hauptverfasser:	Cheng, Chunmin, Sun, Xiang, Shen, Wei, Wang, Qijun, Li, Lijie, Dong, Fang, Liang, Kang, Wu, Gai
Format:	Artikel
Sprache:	eng
Schlagworte:	Compensating defects Formation energy N-type diamond Phosphorus Strain engineering
Online-Zugang:	Volltext
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