Efficiency boosting of 236 nm AlGaN-based micro-LEDs

In this study, 236 nm AlGaN-based deep ultraviolet (DUV) micro-LEDs with different sized P-contact areas are designed and fabricated, and the sidewalls are restored by a wet chemical treatment method with KOH solution. The results reveal that proper KOH treatment can effectively remove plasma damage...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2025-01, Vol.58 (1), p.15109
Hauptverfasser:	Li, Hongbo, Lu, Shunpeng, Zhu, Licai, Sun, Wenchao, Bai, Jiangxiao, Hao, Jialong, Zhang, Shanli, Jiang, Ke, Shi, Zhiming, Jia, Yuping, Chen, Yang, Ben, Jianwei, Liu, Mingrui, Zang, Hang, Wu, Tong, Li, Dabing, Sun, Xiaojuan
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN deep ultraviolet Micro-LEDs sidewall effect
Online-Zugang:	Volltext
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