Cycle-to-cycle switching endurance variability in vertically aligned nanocrystalline molybdenum disulfide: computational insights

We propose a model to depict abrupt transient changes in the endurance test results of a resistive switching device comprising vertically oriented layers of nanocrystalline transition metal dichalcogenide layers with respect to the substrate. We aim to relate and understand the so-called resistance...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2024-08, Vol.57 (32), p.325305
Hauptverfasser:	Turfanda, Aykut, Ünlü, Hilmi
Format:	Artikel
Sprache:	eng
Schlagworte:	endurance memristor resistive switching
Online-Zugang:	Volltext
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