The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors

The sensing performance of N-polar GaN/InAlN MOS-HEMT biosensors for neutral biomolecules was investigated and compared with the Ga-polar MOS-HEMT and N-polar T-gate HEMT by numerical simulation. The results indicate that the N-polar GaN/InAlN MOS-HEMT biosensor has higher sensing sensitivity than t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2024-02, Vol.57 (7), p.75107
Hauptverfasser:	Liu, Yue, Ma, Yuzhen, Guo, Haiqiu, Fu, Su, Liu, Yuhui, Wei, Guangfen, Liu, Yanli, Hao, Yaming, Chen, Dunjun
Format:	Artikel
Sprache:	eng
Schlagworte:	biosensor MOS-HEMT N-polar GaN/InAlN sensitivity T-gate HEMT
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!