Improvement in nonvolatile memory operations for metal–ferroelectric–insulator–semiconductor capacitors using HfZrO 2 and ZrO 2 thin films as ferroelectric and insulator layers

Metal–ferroelectric–insulator–semiconductor (MFIS) capacitors were characterized to elucidate the optimum design schemes for the ferroelectric field-effect transistor applications. The Hf 1− x Zr x O 2 (HZO) thin films (18 nm) were prepared on the SiO 2 and ZrO 2 insulator layers (ILs) with differen...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2022-08, Vol.55 (33), p.335101
Hauptverfasser:	Kim, Yeriaron, Kang, Seung Youl, Woo, Jiyong, Kim, Jeong Hun, Im, Jong-Pil, Yoon, Sung-Min, Moon, Seung Eon
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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