The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers
The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies in the active region are investigated for a temperature range of 17 °C–97 °C. The lasing performance indicates that the n-type doping technique reduced the threshold cur...
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| Veröffentlicht in: | Journal of physics. D, Applied physics Applied physics, 2022-05, Vol.55 (21), p.215105 |
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| container_title | Journal of physics. D, Applied physics |
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| creator | Deng, Huiwen Jarvis, Lydia Li, Zhibo Liu, Zizhuo Tang, Mingchu Li, Keshuang Yang, Junjie Maglio, Benjamin Shutts, Samuel Yu, Jiawang Wang, Lingfang Chen, Siming Jin, Chaoyuan Seeds, Alwyn Liu, Huiyun Smowton, Peter M |
| description | The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies in the active region are investigated for a temperature range of 17 °C–97 °C. The lasing performance indicates that the n-type doping technique reduced the threshold current density of InAs QD lasers across the full temperature range and narrowed the near field lasing spot. However, for short-cavity lasers, the n-type doped laser switches from ground-state to excited-state lasing at a lower temperature compared to undoped and p-type modulation-doped lasers. In contrast, the p-type modulation-doped lasers have a reduced threshold current density for higher temperatures and for shorter lasers with cavity lengths of 1 mm and below. |
| doi_str_mv | 10.1088/1361-6463/ac55c4 |
| format | Article |
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The lasing performance indicates that the n-type doping technique reduced the threshold current density of InAs QD lasers across the full temperature range and narrowed the near field lasing spot. However, for short-cavity lasers, the n-type doped laser switches from ground-state to excited-state lasing at a lower temperature compared to undoped and p-type modulation-doped lasers. In contrast, the p-type modulation-doped lasers have a reduced threshold current density for higher temperatures and for shorter lasers with cavity lengths of 1 mm and below.</description><identifier>ISSN: 0022-3727</identifier><identifier>EISSN: 1361-6463</identifier><identifier>DOI: 10.1088/1361-6463/ac55c4</identifier><identifier>CODEN: JPAPBE</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>direct N-type doped ; InAs/GaAs QDs ; P-type modulation doping ; threshold current density</subject><ispartof>Journal of physics. 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Phys</addtitle><date>2022-05-26</date><risdate>2022</risdate><volume>55</volume><issue>21</issue><spage>215105</spage><pages>215105-</pages><issn>0022-3727</issn><eissn>1361-6463</eissn><coden>JPAPBE</coden><abstract>The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies in the active region are investigated for a temperature range of 17 °C–97 °C. The lasing performance indicates that the n-type doping technique reduced the threshold current density of InAs QD lasers across the full temperature range and narrowed the near field lasing spot. However, for short-cavity lasers, the n-type doped laser switches from ground-state to excited-state lasing at a lower temperature compared to undoped and p-type modulation-doped lasers. 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| subjects | direct N-type doped InAs/GaAs QDs P-type modulation doping threshold current density |
| title | The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers |
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