Simulating the effect of Ar + energy implantation on the strain propagation in AlGaN

In this work, high quality AlGaN layers, grown by metal organic chemical vapour deposition, on a commercial c-sapphire substrate, were implanted at a fluence of 1 × 10 14  A r + ⋅ c m − 2 . Implantation was performed for energies between 25 and 250 keV to explore the strain field created with increa...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2021-06, Vol.54 (24), p.245301
Hauptverfasser:	Cabaço, J S, Faye, D ND, Araújo, J P, Alves, E, Magalhães, S
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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