Growth of ultra-thin large sized 2D flakes at air–liquid interface to obtain 2D-WS 2 monolayers

Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) are promising candidates for future electronics. Currently, the growth of TMD large area thin films/flakes is one of the biggest challenges. A novel method for the growth of ultra-thin and large area WS 2 monolayer flakes has been developed by introducing a solution-based temperature-dependent process. This two-dimensional WS 2 growth process is low cost and environmentally friendly. WO 3 flakes are grown at the air–liquid interface using ammonium tetrathiotungstate ((NH 4 ) 2 WS 4 , ATTW) as WS 2 precursor. The process requires a moderate activation temperature as no flakes are formed at room temperature. Successful growth of flakes was observed in an aqueous solution of the precursor at a temperature between 70 °C and 90 °C. These flakes could be transferred to any substrate by a controlled dip-coating process. Large 2D WS 2 flakes with a lateral size of up to 100 μ m were obtained after sulfurization. The thickness ranged from a WS 2 monolayer to five monolayers, as verified by atomic force microscope. The chemical reaction mechanism behind the formation of the flakes was investigated by FTIR, Raman, UV–Vis and x-ray photoelectron spectroscopy. The initial flakes were found to be made of WO 3 , which were successfully converted to WS 2 by a post annealing step at 500 °C–900 °C. This simple and environmentally friendly growth technique can be used to produce large WS 2 flakes for next generation electronics.