Effect of carrier drift-diffusion transport process on thermal quenching of photoluminescence in GaN

Thermal quenching of the defect-related photoluminescence (PL) has been widely used to determine the fundamental properties of point defects in GaN such as the activation energy (Et) and capture cross section. However, in the present work, we have shown using drift-diffusion modeling and experimenta...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2021-02, Vol.54 (5), p.55106
Hauptverfasser:	Matys, M, Adamowicz, B, Kachi, T, Hashizume, T
Format:	Artikel
Sprache:	eng
Schlagworte:	drift diffusion GaN surface states
Online-Zugang:	Volltext
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