Effect of carrier drift-diffusion transport process on thermal quenching of photoluminescence in GaN

Effect of carrier drift-diffusion transport process on thermal quenching of photoluminescence in GaN

Thermal quenching of the defect-related photoluminescence (PL) has been widely used to determine the fundamental properties of point defects in GaN such as the activation energy (Et) and capture cross section. However, in the present work, we have shown using drift-diffusion modeling and experimenta...

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Veröffentlicht in:Journal of physics. D, Applied physics Applied physics, 2021-02, Vol.54 (5), p.55106
Hauptverfasser: Matys, M, Adamowicz, B, Kachi, T, Hashizume, T
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drift diffusion
GaN
surface states
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Adamowicz, B
Kachi, T
Hashizume, T
description Thermal quenching of the defect-related photoluminescence (PL) has been widely used to determine the fundamental properties of point defects in GaN such as the activation energy (Et) and capture cross section. However, in the present work, we have shown using drift-diffusion modeling and experimental analysis that the thermal quenching of defect-related PL from GaN does not only depend of the defect parameters but also is strongly governed by the carrier drift and diffusion in the depletion region. In particular, we have found that these processes significantly influence the slope of PL thermal quenching and temperature T0 at which the quenching begins. As a result, Et obtained from the Arrhenius plot of the defect-related PL intensity in GaN provides the correct values of the defect activation energy only in the case of low surface state density ( D0
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However, in the present work, we have shown using drift-diffusion modeling and experimental analysis that the thermal quenching of defect-related PL from GaN does not only depend of the defect parameters but also is strongly governed by the carrier drift and diffusion in the depletion region. In particular, we have found that these processes significantly influence the slope of PL thermal quenching and temperature T0 at which the quenching begins. As a result, Et obtained from the Arrhenius plot of the defect-related PL intensity in GaN provides the correct values of the defect activation energy only in the case of low surface state density ( D0&lt;1011 cm−2eV−1) corresponding to the weak surface band bending. However, in the case of high D0 giving rise to the significant surface band bending, the Et value should be cautiously interpreted because it may not correspond entirely to the real defect activation energy due to the drift-diffusion process. 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surface states
title Effect of carrier drift-diffusion transport process on thermal quenching of photoluminescence in GaN
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