Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green's...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2018-03, Vol.51 (14), p.145107
Hauptverfasser:	Louarn, K, Claveau, Y, Marigo-Lombart, L, Fontaine, C, Arnoult, A, Piquemal, F, Bounouh, A, Cavassilas, N, Almuneau, G
Format:	Artikel
Sprache:	eng
Schlagworte:	Electric power Engineering Sciences interband tunneling Micro and nanotechnologies Microelectronics molecular beam epitaxy multi-junction solar cell photovoltaics Physics Quantum Physics quantum well tunnel junction
Online-Zugang:	Volltext
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