Benefits of atomic-level processing by quasi-ALE and ALD technique

A new technology has been developed using the atomic layer etching (ALE) and atomic layer deposition (ALD) concepts. It has been applied to self-aligned contacts (SAC) and patterning processes, for the sub 7 nm technology generation. In the SAC process, ultra-high selectivity of SiO2 etching towards SiN is required, for which we have developed quasi-ALE technique for SiO2 etching. We were able to significantly improve the trade-off between the etching ability of SiO2 on the micro slit portions and SiN selectivity. Quasi-ALE precisely controls the reaction layer thickness of the surface, by controlling the radical flux and ion flux independently, and hence enables etching at lower ion energies (Ei